Invention Application
- Patent Title: PIEZOELECTRIC THIN FILM, PIEZOELECTRIC THIN FILM DEVICE, TARGET, AND METHODS FOR MANUFACTURING PIEZOELECTRIC THIN FILM AND PIEZOELECTRIC THIN FILM DEVICE
- Patent Title (中): 压电薄膜，压电薄膜装置，目标和制造压电薄膜和压电薄膜装置的方法
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Application No.: US15245636Application Date: 2016-08-24
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Publication No.: US20160365503A1Publication Date: 2016-12-15
- Inventor: SHINSUKE IKEUCHI , Toshimaro Yoneda , Yoshitaka Matsuki , Naoyuki Endo
- Applicant: Murata Manufacturing Co., Ltd.
- Priority: JP2014-103352 20140519
- Main IPC: H01L41/187
- IPC: H01L41/187 ; C04B35/622 ; C23C14/34 ; H01L41/047 ; H01J37/34 ; H01L41/09 ; H01L41/316 ; H01L41/332 ; C04B35/465 ; C23C14/35
Abstract:
A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≦m≦0.97, 0≦n≦0.065, and 0≦x≦1.
Public/Granted literature
Information query
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