公开(公告)号：US11610728B2

公开(公告)日：2023-03-21

申请号：US17459862

申请日：2021-08-27

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Yoshitaka Matsuki ,  Hiraku Kawai ,  Yuichi Iida ,  Masahiro Kubota ,  Fumihiko Naruse

IPC: H01F27/29 ,  H05K1/18 ,  H01G2/10 ,  H01G4/228

Abstract: An electronic component comprising a glass body containing a photosensitizer; a conductor as at least a part of an electric element, arranged on the glass body; a terminal electrode as a terminal of the electric element, arranged above an outer surface of the glass body, with the terminal electrode being electrically connected to the conductor; and an insulating film arranged above the outer surface of the glass body. The insulating film reflects or absorbs light in a photosensitive wavelength range of the photosensitizer contained in the glass body.

公开(公告)号：US20160372654A1

公开(公告)日：2016-12-22

申请号：US15235353

申请日：2016-08-12

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shinsuke Ikeuchi ,  Toshimaro Yoneda ,  Yoshitaka Matsuki ,  Naoyuki Endo

IPC: H01L41/187 ,  H01L41/08 ,  H01L41/047

CPC classification number: H01L41/1873 ,  C01G33/006 ,  C01P2002/72 ,  C01P2002/74 ,  C01P2006/40 ,  C23C14/088 ,  H01L41/047 ,  H01L41/0805 ,  H01L41/081 ,  H01L41/316

Abstract: A piezoelectric thin film contains potassium sodium niobate represented by general formula (K1-xNax)NbO3 and CaTiO3, wherein the lattice spacing calculated from the diffraction peak of the (001) plane in an X-ray diffraction profile of the piezoelectric thin film is 3.975 Å or less, and the ratio I101/I001 of the diffraction peak intensity I101 of the (101) plane to the diffraction peak intensity I001 of the (001) plane in the X-ray diffraction profile of the piezoelectric thin film 3 satisfies the relationship log10(I101/I001)≦−2.10.

Abstract translation: 压电薄膜含有由通式（K1-xNax）NbO3和CaTiO3表示的铌酸钾钠，其中由压电薄膜的X射线衍射图中（001）面衍射峰计算的晶格间距为3.975 （101）面的衍射峰强度I101的比I101 / I001与压电薄膜3的X射线衍射图中的（001）面的衍射峰强度I001的比值I101 / I001满足关系式 log10（I101 / I001）≦-2.10。

公开(公告)号：US20160365503A1

公开(公告)日：2016-12-15

申请号：US15245636

申请日：2016-08-24

Applicant: Murata Manufacturing Co., Ltd.

Inventor： SHINSUKE IKEUCHI ,  Toshimaro Yoneda ,  Yoshitaka Matsuki ,  Naoyuki Endo

IPC: H01L41/187 ,  C04B35/622 ,  C23C14/34 ,  H01L41/047 ,  H01J37/34 ,  H01L41/09 ,  H01L41/316 ,  H01L41/332 ,  C04B35/465 ,  C23C14/35

CPC classification number: H01L41/1873 ,  C04B35/465 ,  C04B35/495 ,  C04B35/62222 ,  C04B2235/3201 ,  C04B2235/3208 ,  C04B2235/3236 ,  C04B2235/3255 ,  C04B2235/3262 ,  C23C14/024 ,  C23C14/088 ,  C23C14/3414 ,  C23C14/35 ,  H01J37/3426 ,  H01L41/047 ,  H01L41/0805 ,  H01L41/096 ,  H01L41/316 ,  H01L41/332

Abstract: A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≦m≦0.97, 0≦n≦0.065, and 0≦x≦1.

Abstract translation: 压电薄膜不容易产生非均匀相，表现出良好的压电特性。 压电薄膜含有由通式（1-n）（K1-xNax）mNbO3-nCaTiO3表示的组成，其中通式中的m，n和x在0.87≤m≤0.97,0的范围内 ≤n≤0.065，0≤x≤1。

公开(公告)号：US20160172574A1

公开(公告)日：2016-06-16

申请号：US15053030

申请日：2016-02-25

Applicant: Murata Manufacturing Co., Ltd.

Inventor： SHINSUKE IKEUCHI ,  Kansho Yamamoto ,  Yutaka Kishimoto ,  Yoshitaka Matsuki ,  Naoyuki Endo ,  Toshimaro Yoneda ,  Yutaka Takeshima

IPC: H01L41/08 ,  H01L41/29 ,  H01L41/332

CPC classification number: H01L41/0805 ,  C01G33/006 ,  C01P2002/50 ,  C01P2002/52 ,  C01P2006/40 ,  C23C14/08 ,  H01L41/1873 ,  H01L41/29 ,  H01L41/316 ,  H01L41/332

Abstract: A piezoelectric device that includes a piezoelectric film, which is formed by a sputtering method and which has a columnar structure, and electrodes disposed in contact with the piezoelectric film. The piezoelectric film has a composition containing an element which can substitute Nb and has an oxidation number of 2 or more and less than 5 when oxidized in a proportion of 3.3 mol or less relative to 100 mol of potassium sodium niobate represented by a general formula (K1-xNax)NbO3, where 0

Abstract translation: 包括通过溅射法形成并具有柱状结构的压电膜和与压电膜接触的电极的压电器件。 压电体膜具有含有可以代替Nb的元素的组合物，相对于由通式（10）表示的铌酸钾钠100摩尔氧化比例为3.3摩尔以下，氧化数为2以上且小于5的组成 K1-xNax）NbO3，其中0

公开(公告)号：US11527352B2

公开(公告)日：2022-12-13

申请号：US16838918

申请日：2020-04-02

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Hiraku Kawai ,  Noboru Shiokawa ,  Yuichi Iida ,  Yoshitaka Matsuki ,  Masahiro Kubota ,  Kenji Nishiyama ,  Takaya Wada ,  Tadashi Washimori ,  Rikiya Sano ,  Chiharu Sakaki

IPC: H01F27/29 ,  H03H7/01 ,  H01G4/228 ,  H01F41/04 ,  H01F27/28 ,  H03H1/00

Abstract: An electronic component includes a single-layer glass plate, an outer-surface conductor that is disposed above an outer surface of the single-layer glass plate and that is at least a part of an electrical element, and a terminal electrode that is a terminal of the electrical element. The terminal electrode is disposed above the outer surface of the single-layer glass plate and being electrically connected to the outer-surface conductor.

公开(公告)号：US10181554B2

公开(公告)日：2019-01-15

申请号：US15235353

申请日：2016-08-12

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shinsuke Ikeuchi ,  Toshimaro Yoneda ,  Yoshitaka Matsuki ,  Naoyuki Endo

IPC: H01L41/187 ,  H01L41/047 ,  H01L41/08 ,  C01G33/00 ,  C23C14/08

Abstract: A piezoelectric thin film contains potassium sodium niobate represented by general formula (K1-xNax)NbO3 and CaTiO3, wherein the lattice spacing calculated from the diffraction peak of the (001) plane in an X-ray diffraction profile of the piezoelectric thin film is 3.975 Å or less, and the ratio I101/I001 of the diffraction peak intensity I101 of the (101) plane to the diffraction peak intensity I001 of the (001) plane in the X-ray diffraction profile of the piezoelectric thin film 3 satisfies the relationship log10(I101/I001)≤−2.10.

公开(公告)号：US10312428B2

公开(公告)日：2019-06-04

申请号：US15245636

申请日：2016-08-24

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Shinsuke Ikeuchi ,  Toshimaro Yoneda ,  Yoshitaka Matsuki ,  Naoyuki Endo

IPC: H01L41/187 ,  C23C14/08 ,  H01L41/316 ,  H01L41/332 ,  C04B35/465 ,  C04B35/622 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  H01L41/047 ,  H01L41/09 ,  C04B35/499

Abstract: A piezoelectric thin film does not easily generate a heterogeneous phase and exhibits good piezoelectric characteristics. The piezoelectric thin film contains a composition represented by a general formula: (1-n) (K1-xNax)mNbO3-nCaTiO3, wherein m, n, and x in the general formula are within the ranges of 0.87≤m≤0.97, 0≤n≤0.065, and 0≤x≤1.