Invention Application
- Patent Title: FABRICATION OF THIN-FILM DEVICES USING SELECTIVE AREA EPITAXY
- Patent Title (中): 使用选择区域制作薄膜器件外观图
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Application No.: US15345046Application Date: 2016-11-07
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Publication No.: US20170069788A1Publication Date: 2017-03-09
- Inventor: Thomas Wunderer
- Applicant: Palo Alto Research Center Incorporated
- Main IPC: H01L33/12
- IPC: H01L33/12 ; H01L33/32 ; H01L33/00 ; H01L21/78 ; H01L29/20 ; H01L29/778 ; H01L29/861 ; H01L21/02 ; H01L33/06 ; H01L33/40
Abstract:
A thin film device described herein includes a first thin film layer, a second film layer and a heterostructure within the second film layer. The first thin film layer is atop a substrate. The second thin film layer is grown from the first thin film layer through a patterned mask, having openings, under selective area growth (SAG) conditions. The second thin film layer is configured to be released from the first thin film layer by etching a trench. The etched trench may provide access to the patterned mask and the patterned mask may be eliminated with a wet etchant.
Public/Granted literature
- US09905727B2 Fabrication of thin-film devices using selective area epitaxy Public/Granted day:2018-02-27
Information query
IPC分类:
