Invention Application
- Patent Title: METAL CAP PROTECTION LAYER FOR GATE AND CONTACT METALLIZATION
- Patent Title (中): 金属盖保护层用于门和接触金属化
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Application No.: US14852459Application Date: 2015-09-11
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Publication No.: US20170077256A1Publication Date: 2017-03-16
- Inventor: PRANEET ADUSUMILLI , HEMANTH JAGANNATHAN , ALEXANDER REZNICEK , OSCAR VAN DER STRATEN , CHIH-CHAO YANG
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L29/49
- IPC: H01L29/49 ; H01L29/66 ; H01L27/088 ; H01L23/528 ; H01L23/532 ; H01L21/28 ; H01L29/40 ; H01L21/768
Abstract:
A CMOS fabrication process provides metal gates and contact metallization protected by metal cap layers resistant to reagents employed in downstream processing. Cobalt gates and contact metallization are accordingly feasible in CMOS processing requiring downstream wet cleans and etch processes that would otherwise compromise or destroy them. Low resistivity metal cap materials can be employed.
Public/Granted literature
- US09722038B2 Metal cap protection layer for gate and contact metallization Public/Granted day:2017-08-01
Information query
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