公开(公告)号：US20200219932A1

公开(公告)日：2020-07-09

申请号：US16242583

申请日：2019-01-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： GANGADHARA RAJA MUTHINTI ,  MICHAEL RIZZOLO ,  OSCAR VAN DER STRATEN ,  CHIH-CHAO YANG

IPC: H01L27/22 ,  H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  H01L43/02

Abstract: Integration of structures including an embedded magnetoresistive random access memory (MRAM) device such as a magnetic tunneling junction device includes pre-patterned etch stop layers to prevent excessive etching of the interlayer dielectric during a via open step.

公开(公告)号：US20170077256A1

公开(公告)日：2017-03-16

申请号：US14852459

申请日：2015-09-11

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： PRANEET ADUSUMILLI ,  HEMANTH JAGANNATHAN ,  ALEXANDER REZNICEK ,  OSCAR VAN DER STRATEN ,  CHIH-CHAO YANG

IPC: H01L29/49 ,  H01L29/66 ,  H01L27/088 ,  H01L23/528 ,  H01L23/532 ,  H01L21/28 ,  H01L29/40 ,  H01L21/768

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/76802 ,  H01L21/76834 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76877 ,  H01L21/76883 ,  H01L21/76897 ,  H01L21/823828 ,  H01L23/528 ,  H01L23/53209 ,  H01L27/088 ,  H01L29/401 ,  H01L29/66545 ,  H01L29/6656

Abstract: A CMOS fabrication process provides metal gates and contact metallization protected by metal cap layers resistant to reagents employed in downstream processing. Cobalt gates and contact metallization are accordingly feasible in CMOS processing requiring downstream wet cleans and etch processes that would otherwise compromise or destroy them. Low resistivity metal cap materials can be employed.

Abstract translation: CMOS制造工艺提供金属栅极和接触金属化，其被金属盖层保护，对下游处理中使用的试剂具有抗性。 因此，钴栅极和接触金属化在CMOS加工中是可行的，需要下游的湿法清洗和蚀刻工艺，否则会损害或破坏它们。 可以采用低电阻金属帽材料。