- 专利标题: MAGNETIC NANOMECHANICAL DEVICES FOR STICTION COMPENSATION
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申请号: US15301337申请日: 2014-06-27
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公开(公告)号: US20170158501A1公开(公告)日: 2017-06-08
- 发明人: Jorge A. MUNOZ , Dmitri E. NIKONOV , Kelin J. KUHN , Patrick THEOFANIS , Chytra PAWASHE , Kevin LIN , Seiyon KIM
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 国际申请: PCT/US2014/044594 WO 20140627
- 主分类号: B82B1/00
- IPC分类号: B82B1/00 ; H01H59/00 ; B82B3/00 ; H01L29/66 ; H01L29/84 ; H01L29/82
摘要:
Nanoelectromechanical (NEMS) devices having nanomagnets for an improved range of operating voltages and improved control of dimensions of a cantilever are described. For example, in an embodiment, a nanoelectromechanical (NEMS) device includes a substrate layer, a first magnetic layer disposed above the substrate layer, a first dielectric layer disposed above the first magnetic layer, a second dielectric disposed above the first dielectric layer, and a cantilever disposed above the second dielectric layer. The cantilever bends from a first position to a second position towards the substrate layer when a voltage is applied to the cantilever.
公开/授权文献
- US09926193B2 Magnetic nanomechanical devices for stiction compensation 公开/授权日:2018-03-27
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