- 专利标题: METHOD FOR MANUFACTURING DIAMOND SUBSTRATE
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申请号: US15445196申请日: 2017-02-28
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公开(公告)号: US20170247814A1公开(公告)日: 2017-08-31
- 发明人: Hitoshi NOGUCHI , Shozo SHIRAI , Toshiharu MAKINO , Masahiko OGURA , Hiromitsu KATO , Hiroyuki KAWASHIMA , Daisuke KUWABARA , Satoshi YAMASAKI , Daisuke TAKEUCHI , Norio TOKUDA , Takao INOKUMA , Tsubasa MATSUMOTO
- 申请人: SHIN-ETSU CHEMICAL CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY
- 申请人地址: JP Tokyo JP Tokyo JP Kanazawa-shi
- 专利权人: SHIN-ETSU CHEMICAL CO., LTD.,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY
- 当前专利权人: SHIN-ETSU CHEMICAL CO., LTD.,NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY,NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY
- 当前专利权人地址: JP Tokyo JP Tokyo JP Kanazawa-shi
- 优先权: JP2016-037183 20160229
- 主分类号: C30B25/18
- IPC分类号: C30B25/18 ; H01L21/02 ; C30B29/04 ; H01L29/16 ; C30B25/20 ; C30B25/04
摘要:
The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.
公开/授权文献
- US10100435B2 Method for manufacturing diamond substrate 公开/授权日:2018-10-16
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