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1.发明申请公开(公告)号：US20170247811A1
公开(公告)日：2017-08-31
申请号：US15445134
申请日：2017-02-28
申请人： SHIN-ETSU CHEMICAL CO., LTD. , National Institute of Advanced Industrial Science and Technology , NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY
发明人： Hitoshi NOGUCHI , Shozo SHIRAI , Toshiharu MAKINO , Masahiko OGURA , Hiromitsu KATO , Hiroyuki KAWASHIMA , Daisuke KUWABARA , Satoshi YAMASAKI , Daisuke TAKEUCHI , Norio TOKUDA , Takao INOKUMA , Tsubasa MATSUMOTO
CPC分类号： C30B25/04 , C30B25/186 , C30B25/20 , C30B29/04 , H01L21/02057 , H01L21/02085 , H01L21/02376 , H01L21/02527 , H01L21/0262 , H01L21/3065 , H01L21/3086 , H01L29/1602
摘要： The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.
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公开(公告)号：US20170247814A1
公开(公告)日：2017-08-31
申请号：US15445196
申请日：2017-02-28
申请人： SHIN-ETSU CHEMICAL CO., LTD. , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY , NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY
发明人： Hitoshi NOGUCHI , Shozo SHIRAI , Toshiharu MAKINO , Masahiko OGURA , Hiromitsu KATO , Hiroyuki KAWASHIMA , Daisuke KUWABARA , Satoshi YAMASAKI , Daisuke TAKEUCHI , Norio TOKUDA , Takao INOKUMA , Tsubasa MATSUMOTO
CPC分类号： C30B25/186 , C30B25/04 , C30B25/20 , C30B29/04 , H01L21/02376 , H01L21/02527 , H01L21/0262 , H01L21/02647 , H01L21/02658 , H01L21/3065 , H01L21/3081 , H01L29/1602
摘要： The present invention provides a method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of removing a foreign substance adhered on a wall of the patterned diamond prepared in the first step, and a third step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step. There can be provided a method for manufacturing a diamond substrate with few dislocation defects, in which generation of abnormal growth particles are suppressed.
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公开(公告)号：US20190093253A1
公开(公告)日：2019-03-28
申请号：US16179363
申请日：2018-11-02
申请人： SHIN-ETSU CHEMICAL CO., LTD. , National Institute of Advanced Industrial Science and Technology , NATIONAL UNIVERSITY CORPORATION KANAZAWA UNIVERSITY
发明人： Hitoshi NOGUCHI , Shozo SHIRAI , Toshiharu MAKINO , Masahiko OGURA , Hiromitsu KATO , Hiroyuki KAWASHIMA , Daisuke KUWABARA , Satoshi YAMASAKI , Daisuke TAKEUCHI , Norio TOKUDA , Takao INOKUMA , Tsubasa MATSUMOTO
IPC分类号： C30B25/04 , H01L29/16 , H01L21/02 , C30B25/20 , C30B29/04 , C30B25/18 , H01L21/3065 , H01L21/308
摘要： A method for manufacturing a diamond substrate, including: a first step of preparing patterned diamond on a foundation surface, a second step of growing diamond from the patterned diamond prepared in the first step to form the diamond in a pattern gap of the patterned diamond prepared in the first step, a third step of removing the patterned diamond prepared in the first step to form a patterned diamond composed of the diamond formed in the second step, and a fourth step of growing diamond from the patterned diamond formed in the third step to form the diamond in a pattern gap of the patterned diamond formed in the third step. There can be provided a method for manufacturing a diamond substrate which can sufficiently suppress dislocation defects, a high-quality diamond substrate, and a freestanding diamond substrate.
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公开(公告)号：US20190288661A1
公开(公告)日：2019-09-19
申请号：US16319016
申请日：2017-07-04
发明人： Shoji AKIYAMA , Masayuki TANNO , Shozo SHIRAI
摘要： Provided is a high-performance composite substrate for surface acoustic wave device which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joined interface between a piezoelectric crystal film and a support substrate is reduced. The composite substrate for surface acoustic wave device includes: a piezoelectric single crystal substrate; and a support substrate, where, at a portion of a joined interface between the piezoelectric single crystal substrate and the support substrate, at least one of the piezoelectric single crystal substrate and the support substrate has an uneven structure, a ratio of an average length RSm of elements in a cross-sectional curve of the uneven structure to a wavelength λ of a surface acoustic wave when the substrate is used as a surface acoustic wave device is equal to or more than 0.2 and equal to or less than 7.0.
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公开(公告)号：US20240136464A1
公开(公告)日：2024-04-25
申请号：US18521384
申请日：2023-11-28
发明人： Hiroyuki OTSUKA , Shozo SHIRAI
IPC分类号： H01L31/18 , C30B29/06 , C30B31/08 , C30B31/18 , C30B33/02 , H01L21/22 , H01L21/324 , H01L31/0288 , H01L31/068
CPC分类号： H01L31/1804 , C30B29/06 , C30B31/08 , C30B31/185 , C30B33/02 , H01L21/22 , H01L21/324 , H01L31/0288 , H01L31/068 , H01L31/1864 , Y02E10/547 , Y02P70/50
摘要： A solar cell includes a light-receiving surface electrode formed on a light-receiving surface, a back surface electrode formed on a backside, and a CZ silicon single crystal substrate doped with gallium. The CZ silicon single crystal substrate contains 12 ppm or more oxygen atoms. A spiral oxygen-induced defect is not observed in an EL (electroluminescence) image of the solar cell.
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公开(公告)号：US20190386640A1
公开(公告)日：2019-12-19
申请号：US16475528
申请日：2017-12-06
发明人： Shoji AKIYAMA , Shozo SHIRAI , Masayuki TANNO
摘要： A composite substrate capable of maintaining high resistance after processing at 300° C. and a method of manufacturing the composite substrate are provided. The composite substrate according to the present invention is manufactured by bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding. The piezoelectric material substrate is particularly preferably a lithium tantalate wafer (LT) substrate or a lithium niobate (LN) substrate.
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公开(公告)号：US20230175170A1
公开(公告)日：2023-06-08
申请号：US17906731
申请日：2021-04-01
发明人： Shoji AKIYAMA , Masayuki TANNO , Shozo SHIRAI
CPC分类号： C30B29/30 , C23C16/0254 , C23C16/44 , C23C16/30
摘要： A composite substrate is resistant to the development of cracks, thereby not having deteriorating properties even when exposed to high-temperatures or low temperatures, and a method is provided for producing the composite substrate. The composite substrate 10 of the present invention has a supporting substrate 2, a stress relaxing interlayer 3, and an oxide single-crystal thin film 1 stacked in the listed order. The stress relaxing interlayer 3 has a thermal expansion coefficient between that of the supporting substrate 2 and that of the oxide single-crystal thin film 1.
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公开(公告)号：US20170352774A1
公开(公告)日：2017-12-07
申请号：US15538893
申请日：2015-11-25
发明人： Hiroyuki OTSUKA , Shozo SHIRAI
IPC分类号： H01L31/18 , H01L31/0288
CPC分类号： H01L31/1804 , C30B29/06 , C30B31/08 , C30B31/185 , C30B33/02 , H01L21/22 , H01L21/324 , H01L31/0288 , H01L31/068 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： The present invention is a method for manufacturing a substrate for a solar cell composed of a single crystal silicon, including the steps of: producing a silicon single crystal ingot; slicing a silicon substrate from the silicon single crystal ingot; and subjecting the silicon substrate to low temperature thermal treatment at a temperature of 800° C. or more and less than 1200° C., wherein the silicon single crystal ingot or the silicon substrate is subjected to high temperature thermal treatment at a temperature of 1200° C. or more for 30 seconds or more before the low temperature thermal treatment. As a result, it is possible to provide a method for manufacturing a substrate for a solar cell that can prevent decrease in the minority carrier lifetime of the substrate even when the substrate has higher oxygen concentration.
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公开(公告)号：US20240022229A1
公开(公告)日：2024-01-18
申请号：US18370612
申请日：2023-09-20
发明人： Shoji AKIYAMA , Shozo SHIRAI , Masayuki TANNO
CPC分类号： H03H9/02574 , H03H3/10 , H03H9/02559 , H03H9/02834 , H03H9/02897 , H03H3/02 , H03H2003/028
摘要： A composite substrate that is obtained by bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding.
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公开(公告)号：US20190280666A1
公开(公告)日：2019-09-12
申请号：US16318966
申请日：2017-05-23
发明人： Shoji AKIYAMA , Masayuki TANNO , Shozo SHIRAI
摘要： Provided is a composite substrate for surface acoustic wave device which does not cause peeling of an entire surface of a piezoelectric single crystal film even when heating the film to 400° C. or higher in a step after bonding. The composite substrate is formed by providing a piezoelectric single crystal substrate and a support substrate, forming a film made of an inorganic material on at least one of the piezoelectric single crystal substrate and the support substrate, and joining the piezoelectric single crystal substrate with the support substrate so as to sandwich the film made of the inorganic material.
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