Invention Application
- Patent Title: METHOD FOR ELECTROCHEMICALLY GROWN YTTRIA OR YTTRIUM OXIDE ON SEMICONDUCTOR PROCESSING EQUIPMENT
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Application No.: US15451995Application Date: 2017-03-07
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Publication No.: US20170260618A1Publication Date: 2017-09-14
- Inventor: Laksheswar KALITA , Prerna A. GORADIA , Geetika BAJAJ , Yogita PAREEK , Yixing LIN , Dmitry LUBOMIRSKY , Ankur KADAM , Bipin THAKUR , Kevin A. PAPKE , Kaushik VAIDYA
- Applicant: Applied Materials, Inc.
- Main IPC: C23C8/12
- IPC: C23C8/12 ; C22F1/16 ; C23C8/16 ; C25D3/54 ; C25D5/50

Abstract:
The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.
Public/Granted literature
- US10253406B2 Method for forming yttrium oxide on semiconductor processing equipment Public/Granted day:2019-04-09
Information query
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