Invention Grant
- Patent Title: Method for forming yttrium oxide on semiconductor processing equipment
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Application No.: US15451995Application Date: 2017-03-07
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Publication No.: US10253406B2Publication Date: 2019-04-09
- Inventor: Laksheswar Kalita , Prerna S. Goradia , Geetika Bajaj , Yogita Pareek , Yixing Lin , Dmitry Lubomirsky , Ankur Kadam , Bipin Thakur , Kevin A. Papke , Kaushik Vaidya
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- Main IPC: C25D3/54
- IPC: C25D3/54 ; C25D5/18 ; C25D5/48 ; C25D11/34 ; C23C8/12 ; C22F1/16 ; C23C8/16 ; C25D5/50 ; C25D11/08
Abstract:
The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.
Public/Granted literature
- US20170260618A1 METHOD FOR ELECTROCHEMICALLY GROWN YTTRIA OR YTTRIUM OXIDE ON SEMICONDUCTOR PROCESSING EQUIPMENT Public/Granted day:2017-09-14
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