Invention Application
- Patent Title: HIGH POWER MMIC DEVICES HAVING BYPASSED GATE TRANSISTORS
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Application No.: US15608048Application Date: 2017-05-30
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Publication No.: US20170271258A1Publication Date: 2017-09-21
- Inventor: Simon M. Wood , James Milligan , Mitchell Flowers , Donald Farrell
- Applicant: Cree, Inc.
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L29/205 ; H01L29/417 ; H03F1/56 ; H01L29/778 ; H01L23/528 ; H01L23/66 ; H03F3/195 ; H01L29/20 ; H01L29/423
Abstract:
Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.
Public/Granted literature
- US09947616B2 High power MMIC devices having bypassed gate transistors Public/Granted day:2018-04-17
Information query
IPC分类:
