公开(公告)号：US11289441B2

公开(公告)日：2022-03-29

申请号：US16597224

申请日：2019-10-09

Applicant: Cree, Inc.

Inventor： Sung Chul Joo ,  Jack Powell ,  Donald Farrell ,  Bradley Millon

IPC: H01L23/66 ,  H01L23/00 ,  H01P11/00 ,  H01P3/00

Abstract: A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

公开(公告)号：US20210111144A1

公开(公告)日：2021-04-15

申请号：US16597224

申请日：2019-10-09

Applicant: Cree, Inc.

Inventor： Sung Chul Joo ,  Jack Powell ,  Donald Farrell ,  Bradley Millon

IPC: H01L23/00 ,  H01L23/66 ,  H01P3/00 ,  H01P11/00

Abstract: A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

公开(公告)号：US09786660B1

公开(公告)日：2017-10-10

申请号：US15073201

申请日：2016-03-17

Applicant: Cree, Inc.

Inventor： Donald Farrell ,  Simon Wood ,  Scott Sheppard ,  Dan Namishia

IPC: H01L27/118 ,  H01L27/088 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417

CPC classification number: H01L27/088 ,  H01L29/404 ,  H01L29/41758 ,  H01L29/4238

Abstract: A transistor device includes a source contact extending in a first direction, a gate finger extending in the first direction adjacent the source contact, and a drain contact adjacent the gate finger, wherein the gate finger is between the drain contact and the source contact. The device further includes a gate jumper extending in the first direction, a gate bus connected to the gate jumper and the gate finger, and a gate signal distribution bar that is spaced apart from the gate bus in the first direction and that connects the gate jumper to the gate finger.

公开(公告)号：US09947616B2

公开(公告)日：2018-04-17

申请号：US15608048

申请日：2017-05-30

Applicant: Cree, Inc.

Inventor： Simon M. Wood ,  James Milligan ,  Mitchell Flowers ,  Donald Farrell

IPC: H01L23/52 ,  H01L23/522 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L23/528 ,  H01L23/66 ,  H03F3/195 ,  H03F1/56

CPC classification number: H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787 ,  H01L2223/6655 ,  H01L2223/6683 ,  H03F1/56 ,  H03F3/195 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387

Abstract: Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.

公开(公告)号：US20170271329A1

公开(公告)日：2017-09-21

申请号：US15073201

申请日：2016-03-17

Applicant: Cree, Inc.

Inventor： Donald Farrell ,  Simon Wood ,  Scott Sheppard ,  Dan Namishia

IPC: H01L27/088 ,  H01L29/423 ,  H01L29/417 ,  H01L29/40

CPC classification number: H01L27/088 ,  H01L29/404 ,  H01L29/41758 ,  H01L29/4238

Abstract: A transistor device includes a source contact extending in a first direction, a gate finger extending in the first direction adjacent the source contact, and a drain contact adjacent the gate finger, wherein the gate finger is between the drain contact and the source contact. The device further includes a gate jumper extending in the first direction, a gate bus connected to the gate jumper and the gate finger, and a gate signal distribution bar that is spaced apart from the gate bus in the first direction and that connects the gate jumper to the gate finger.

公开(公告)号：US20170271258A1

公开(公告)日：2017-09-21

申请号：US15608048

申请日：2017-05-30

Applicant: Cree, Inc.

Inventor： Simon M. Wood ,  James Milligan ,  Mitchell Flowers ,  Donald Farrell

IPC: H01L23/522 ,  H01L29/205 ,  H01L29/417 ,  H03F1/56 ,  H01L29/778 ,  H01L23/528 ,  H01L23/66 ,  H03F3/195 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787 ,  H01L2223/6655 ,  H01L2223/6683 ,  H03F1/56 ,  H03F3/195 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387

Abstract: Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.