公开(公告)号：US09947616B2

公开(公告)日：2018-04-17

申请号：US15608048

申请日：2017-05-30

Applicant: Cree, Inc.

Inventor： Simon M. Wood ,  James Milligan ,  Mitchell Flowers ,  Donald Farrell

IPC: H01L23/52 ,  H01L23/522 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L23/528 ,  H01L23/66 ,  H03F3/195 ,  H03F1/56

CPC classification number: H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787 ,  H01L2223/6655 ,  H01L2223/6683 ,  H03F1/56 ,  H03F3/195 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387

Abstract: Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.

公开(公告)号：US20170271258A1

公开(公告)日：2017-09-21

申请号：US15608048

申请日：2017-05-30

Applicant: Cree, Inc.

Inventor： Simon M. Wood ,  James Milligan ,  Mitchell Flowers ,  Donald Farrell

IPC: H01L23/522 ,  H01L29/205 ,  H01L29/417 ,  H03F1/56 ,  H01L29/778 ,  H01L23/528 ,  H01L23/66 ,  H03F3/195 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787 ,  H01L2223/6655 ,  H01L2223/6683 ,  H03F1/56 ,  H03F3/195 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387

Abstract: Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.