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公开(公告)号：US20150002227A1
公开(公告)日：2015-01-01
申请号：US13930544
申请日：2013-06-28
Applicant: Cree, Inc.
Inventor： William Pribble , James Milligan , Simon Wood
CPC classification number: H03F3/195 , H03F1/0288 , H03F1/56 , H03F3/245 , H03F2200/387 , H03H7/383
Abstract: A microwave integrated circuit includes a substrate and a power amplifier on the substrate. The power amplifier includes a power divider circuit having an input configured to receive an input RF signal, a base amplifier having an input coupled to a first output of the power divider circuit and a peaking amplifier having an input coupled to a second output of the power divider circuit and an output coupled to an output combining node. The power amplifier further includes an impedance inverter circuit coupling the output of the base amplifier to the output combining node and a load matching circuit having an input coupled to the output combining node and an output configured to be coupled to a load.
Abstract translation: 微波集成电路在衬底上包括衬底和功率放大器。 功率放大器包括功率分配器电路，其具有被配置为接收输入RF信号的输入，具有耦合到功率分配器电路的第一输出的输入的基极放大器和具有耦合到功率的第二输出的输入的峰化放大器 分频器电路和耦合到输出组合节点的输出。 功率放大器还包括将基极放大器的输出耦合到输出组合节点的阻抗反相器电路和具有耦合到输出组合节点的输入的负载匹配电路和被配置为耦合到负载的输出。
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公开(公告)号：US09407214B2
公开(公告)日：2016-08-02
申请号：US13930544
申请日：2013-06-28
Applicant: Cree, Inc.
Inventor： William Pribble , James Milligan , Simon Wood
CPC classification number: H03F3/195 , H03F1/0288 , H03F1/56 , H03F3/245 , H03F2200/387 , H03H7/383
Abstract: A microwave integrated circuit includes a substrate and a power amplifier on the substrate. The power amplifier includes a power divider circuit having an input configured to receive an input RF signal, a base amplifier having an input coupled to a first output of the power divider circuit and a peaking amplifier having an input coupled to a second output of the power divider circuit and an output coupled to an output combining node. The power amplifier further includes an impedance inverter circuit coupling the output of the base amplifier to the output combining node and a load matching circuit having an input coupled to the output combining node and an output configured to be coupled to a load.
Abstract translation: 微波集成电路在衬底上包括衬底和功率放大器。 功率放大器包括功率分配器电路，其具有被配置为接收输入RF信号的输入，具有耦合到功率分配器电路的第一输出的输入的基极放大器和具有耦合到功率的第二输出的输入的峰化放大器 分频器电路和耦合到输出组合节点的输出。 功率放大器还包括将基极放大器的输出耦合到输出组合节点的阻抗反相器电路和具有耦合到输出组合节点的输入的负载匹配电路和被配置为耦合到负载的输出。
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公开(公告)号：US09947616B2
公开(公告)日：2018-04-17
申请号：US15608048
申请日：2017-05-30
Applicant: Cree, Inc.
Inventor： Simon M. Wood , James Milligan , Mitchell Flowers , Donald Farrell
IPC: H01L23/52 , H01L23/522 , H01L29/20 , H01L29/205 , H01L29/417 , H01L29/423 , H01L29/778 , H01L23/528 , H01L23/66 , H03F3/195 , H03F1/56
CPC classification number: H01L23/5221 , H01L23/5283 , H01L23/66 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787 , H01L2223/6655 , H01L2223/6683 , H03F1/56 , H03F3/195 , H03F2200/222 , H03F2200/318 , H03F2200/387
Abstract: Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.
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公开(公告)号：US20170271258A1
公开(公告)日：2017-09-21
申请号：US15608048
申请日：2017-05-30
Applicant: Cree, Inc.
Inventor： Simon M. Wood , James Milligan , Mitchell Flowers , Donald Farrell
IPC: H01L23/522 , H01L29/205 , H01L29/417 , H03F1/56 , H01L29/778 , H01L23/528 , H01L23/66 , H03F3/195 , H01L29/20 , H01L29/423
CPC classification number: H01L23/5221 , H01L23/5283 , H01L23/66 , H01L29/2003 , H01L29/205 , H01L29/41758 , H01L29/42316 , H01L29/7787 , H01L2223/6655 , H01L2223/6683 , H03F1/56 , H03F3/195 , H03F2200/222 , H03F2200/318 , H03F2200/387
Abstract: Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.
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