Invention Application
- Patent Title: SEMICONDUCTOR DEVICE COMPRISING A GATE FORMED FROM A GATE RING
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Application No.: US15657401Application Date: 2017-07-24
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Publication No.: US20170323961A1Publication Date: 2017-11-09
- Inventor: Ning GE , Leong Yap CHIA , Pin Chin LEE , Jose Jehrome RANDO
- Applicant: Hewlett-Packard Development Company, L.P.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/28 ; H01L29/66 ; H01L21/8234 ; H01L29/08
Abstract:
In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.
Public/Granted literature
- US10084062B2 Semiconductor device comprising a gate formed from a gate ring Public/Granted day:2018-09-25
Information query
IPC分类:
