公开(公告)号：US20170291414A1

公开(公告)日：2017-10-12

申请号：US15516648

申请日：2014-10-28

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning GE ,  Leong Yap CHIA ,  Pin Chin LEE

IPC: B41J2/045 ,  B41J2/135 ,  B41J2/175

CPC classification number: B41J2/04581 ,  B41J2/04541 ,  B41J2/0458 ,  B41J2/135 ,  B41J2/1753 ,  B41J2/17546 ,  B41J2202/17

Abstract: A printhead having a number of single-dimensional memristor banks is described. The printhead includes a number of nozzles to deposit an amount of fluid onto a print medium. Each nozzle includes a firing chamber to hold the amount of fluid, an opening to dispense the amount of fluid onto the print medium, and an ejector to eject the amount of fluid through the opening. The printhead also includes a number of single-dimensional memristor banks. Each memristor bank includes a number of memristors arranged in a single dimension and a number of serially-connected de-multiplexers to selectively activate a target memristor of the memristor bank. The number of serially-connected de-multiplexers is equal to the number of memristors and an output of at least one de-multiplexer is an input into a subsequent de-multiplexer.

公开(公告)号：US20170323961A1

公开(公告)日：2017-11-09

申请号：US15657401

申请日：2017-07-24

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning GE ,  Leong Yap CHIA ,  Pin Chin LEE ,  Jose Jehrome RANDO

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/08

CPC classification number: H01L29/66575 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/78 ,  H05K2203/013

Abstract: In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.