公开(公告)号：US20170323961A1

公开(公告)日：2017-11-09

申请号：US15657401

申请日：2017-07-24

Applicant: Hewlett-Packard Development Company, L.P.

Inventor： Ning GE ,  Leong Yap CHIA ,  Pin Chin LEE ,  Jose Jehrome RANDO

IPC: H01L29/78 ,  H01L21/28 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/08

CPC classification number: H01L29/66575 ,  H01L21/28035 ,  H01L21/28123 ,  H01L21/823437 ,  H01L21/823481 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/78 ,  H05K2203/013

Abstract: In some examples, a semiconductor device includes a substrate, a first doped region formed in the substrate, a second doped region around and spaced apart from the first doped region, and a channel between the first and second doped regions and formed using a gate ring on the substrate as a mask. A gate is formed over only a portion of the channel, the gate being a portion of the gate ring.