Invention Application
- Patent Title: Semiconductor Devices and Methods for Forming Semiconductor Devices
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Application No.: US15642893Application Date: 2017-07-06
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Publication No.: US20180013013A1Publication Date: 2018-01-11
- Inventor: Anton Mauder , Frank Dieter Pfirsch , Hans-Joachim Schulze , Philipp Seng , Armin Willmeroth
- Applicant: Infineon Technologies AG
- Priority: DE102016112490.7 20160707
- Main IPC: H01L29/861
- IPC: H01L29/861 ; H01L29/06 ; H01L29/66 ; H01L29/08 ; H01L21/225 ; H01L21/266
Abstract:
A semiconductor device includes an anode doping region of a diode structure arranged in a semiconductor substrate. The anode doping region has a first conductivity type. The semiconductor device further includes a second conductivity type contact doping region having a second conductivity type. The second conductivity type contact doping region is arranged at a surface of the semiconductor substrate and surrounded in the semiconductor substrate by the anode doping region. The anode doping region includes a buried non-depletable portion. At least part of the buried non-depletable portion is located below the second conductivity type contact doping region in the semiconductor substrate.
Public/Granted literature
- US10516065B2 Semiconductor devices and methods for forming semiconductor devices Public/Granted day:2019-12-24
Information query
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