- 专利标题: ELECTROSTATIC CHUCK DEVICE, AND SEMICONDUCTOR MANUFACTURING DEVICE
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申请号: US15550205申请日: 2016-02-03
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公开(公告)号: US20180025933A1公开(公告)日: 2018-01-25
- 发明人: Kazunori ISHIMURA , Kazuto ANDO , Kentaro TAKAHASHI , Yuhki KINPARA , Shinichi MAETA , Mamoru KOSAKAI
- 申请人: SUMITOMO OSAKA CEMENT CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SUMITOMO OSAKA CEMENT CO., LTD.
- 当前专利权人: SUMITOMO OSAKA CEMENT CO., LTD.
- 当前专利权人地址: JP Tokyo
- 优先权: JP2015-029274 20150218; JP2015-044587 20150306
- 国际申请: PCT/JP2016/053263 WO 20160203
- 主分类号: H01L21/683
- IPC分类号: H01L21/683 ; H01L21/67
摘要:
An electrostatic chuck part of an electrostatic chuck device has an electrostatic chuck part inner peripheral surface surrounding an opening of a chuck part through-hole, and an electrostatic chuck part outer peripheral surface surrounding the electrostatic chuck part inner peripheral surface. An insulator has an insulator main body in which an insulator through-hole having an opening on the electrostatic chuck part side is formed, an insulator inner end face, and an insulator outer end face which faces the electrostatic chuck part outer peripheral surface. The insulator inner end face and the electrostatic chuck part inner peripheral surface are in contact with each other, or an adhesion layer or a plasma-resistant adhesive layer extends in a gap between the insulator inner end face and the electrostatic chuck part inner peripheral surface. The plasma-resistant adhesive layer is formed between the electrostatic chuck part outer peripheral surface and the insulator outer end face.
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