ETCHING DEVICE, SUBSTRATE PROCESSING APPARATUS, ETCHING METHOD AND SUBSTRATE PROCESSING METHOD
摘要:
During a first period, pure water used as a low-volatile liquid is supplied onto a substrate while the substrate is rotated. After discharge of the low-volatile liquid is stopped, the low-volatile liquid remains in a large region on a DSA film. The low-volatile liquid is held on the DSA film without reacting with the DSA film. During a subsequent second period, an organic solvent is supplied to the substrate while the substrate is rotated. The organic solvent supplied to the substrate is mixed with the low-volatile liquid remaining on the DSA film. In this case, volatilization of the organic solvent is inhibited on the DSA film.
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