Invention Application
- Patent Title: MULTIPLE-THRESHOLD NANOSHEET TRANSISTORS
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Application No.: US15298737Application Date: 2016-10-20
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Publication No.: US20180114833A1Publication Date: 2018-04-26
- Inventor: Ruqiang Bao , Michael A. Guillorn , Terence B. Hook , Nicolas J. Loubet , Robert R. Robison , Reinaldo A. Vega , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/306 ; H01L29/423 ; H01L29/08 ; H01L29/10 ; H01L29/786 ; H01L27/088
Abstract:
Semiconductor devices and methods of making the same include forming a stack of alternating layers of channel material and sacrificial material. The sacrificial material is etched away to free the layers of channel material. A gate stack is formed around the layers of channel material. At least one layer of channel material is deactivated. Source and drain regions are formed in contact with the at least one layer of active channel material.
Public/Granted literature
- US10340340B2 Multiple-threshold nanosheet transistors Public/Granted day:2019-07-02
Information query
IPC分类:
