- 专利标题： METALLIC SPIN SUPER LATTICE FOR LOGIC AND MEMORY DEVICES
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申请号： US15569978申请日： 2015-06-24
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公开(公告)号： US20180158588A1公开(公告)日： 2018-06-07
- 发明人: Sasikanth MANIPATRUNI , Anurag CHAUDHRY , Dmitri E. NIKONOV , Ian A. YOUNG
- 申请人： Intel Corporation
- 国际申请： PCT/US2015/037445 WO 20150624
- 主分类号： H01F10/32
- IPC分类号： H01F10/32 ; H01L43/10 ; G11C11/16 ; G11C11/155 ; H03K19/16 ; H01L43/08
摘要：
Described is an apparatus which comprises: an input ferromagnet to receive a first charge current and to produce a corresponding spin current; and a stack of metal layers configured to convert the corresponding spin current to a second charge current, wherein the stack of metal layers is coupled to the input magnet.
公开/授权文献
- US10483026B2 Metallic spin super lattice for logic and memory devices 公开/授权日：2019-11-19