公开(公告)号：US20180158588A1

公开(公告)日：2018-06-07

申请号：US15569978

申请日：2015-06-24

Applicant: Intel Corporation

Inventor： Sasikanth MANIPATRUNI ,  Anurag CHAUDHRY ,  Dmitri E. NIKONOV ,  Ian A. YOUNG

IPC: H01F10/32 ,  H01L43/10 ,  G11C11/16 ,  G11C11/155 ,  H03K19/16 ,  H01L43/08

CPC classification number: H01F10/3268 ,  G11C11/155 ,  G11C11/1675 ,  H01F10/265 ,  H01L43/08 ,  H01L43/10 ,  H03K19/16 ,  H03K19/18

Abstract: Described is an apparatus which comprises: an input ferromagnet to receive a first charge current and to produce a corresponding spin current; and a stack of metal layers configured to convert the corresponding spin current to a second charge current, wherein the stack of metal layers is coupled to the input magnet.

公开(公告)号：US20180327887A1

公开(公告)日：2018-11-15

申请号：US15777502

申请日：2015-12-18

Applicant: Intel Corporation

Inventor： Christopher J. WIEGAND ,  Philip YASHAR ,  Anurag CHAUDHRY

IPC: C22C27/04 ,  C23C14/34 ,  C23C14/56 ,  H01J37/34 ,  C22C1/04

CPC classification number: C22C27/04 ,  C22C1/045 ,  C23C14/3414 ,  C23C14/564 ,  H01J37/3405 ,  H01J37/3426

Abstract: Refractory metal alloy targets for reducing particles in physical vapor deposition processing and refractory metal-based layer for integrated circuit applications (for example, crystallization barrier layers in non-volatile memory devices) are disclosed herein. An exemplary method for reducing particles in a PVD chamber include positioning a refractory metal alloy target in the PVD chamber, positioning a substrate in the PVD chamber a distance from the refractory metal alloy target, and sputtering material from the refractory metal alloy target to form a refractory metal-based layer over the substrate. The refractory metal alloy target includes a refractory metal (for example, tungsten or molybdenum) alloyed with a body-centered cubic (BCC) metal (for example, niobium, tantalum, vanadium, or a combination thereof). The BCC metal has a Young's modulus lower than a Young's modulus of the refractory metal.

公开(公告)号：US20170200884A1

公开(公告)日：2017-07-13

申请号：US15324589

申请日：2014-08-05

Applicant: Intel Corporation

Inventor： Kaan OGUZ ,  Mark L. DOCZY ,  Brian S. DOYLE ,  Charles C. KUO ,  Anurag CHAUDHRY ,  Robert S. CHAU

IPC: H01L43/08 ,  H01L27/22 ,  H01L43/12 ,  G11C11/16 ,  H01L43/10

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/10 ,  H01L43/12

Abstract: Embodiments of the present disclosure describe configurations and techniques to increase interfacial anisotropy of magnetic tunnel junctions. In embodiments, a magnetic tunnel junction may include a cap layer, a tunnel barrier, and a magnetic layer disposed between the cap layer and the tunnel barrier. A buffer layer may, in some embodiments, be disposed between the magnetic layer and a selected one of the cap layer or the tunnel barrier. In such embodiments, the interfacial anisotropy of the buffer layer and the selected one of the cap layer or the tunnel barrier may be greater than an interfacial anisotropy of the magnetic layer and the selected one of the cap layer or the tunnel barrier. Other embodiments may be described and/or claimed.

公开(公告)号：US20180158587A1

公开(公告)日：2018-06-07

申请号：US15569975

申请日：2015-06-24

Applicant: Intel Corporation

Inventor： Sasikanth MANIPATRUNI ,  Anurag CHAUDHRY ,  Dmitri E. NIKONOV ,  David J. MICHALAK ,  Ian A. YOUNG

IPC: H01F10/32 ,  H01F41/30

CPC classification number: H01F10/3254 ,  B82Y25/00 ,  H01F10/1936 ,  H01F10/30 ,  H01F10/329 ,  H01F41/308 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H03K19/16

Abstract: Described is an apparatus which comprises: an input magnet formed of one or more materials with a sufficiently high anisotropy and sufficiently low magnetic saturation to increase injection of spin currents; and a first interface layer coupled to the input magnet, wherein the first interface layer is formed of non-magnetic material such that the first interface layer and the input magnet together have sufficiently matched atomistic crystalline layers.