A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, the word line including a first portion including a first conductive material and a second portion including a second conductive material, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and a conductive oxide material layer, the semiconductor material layer disposed adjacent the second portion of the word line, and forming a memory cell including the nonvolatile memory material at an intersection of the local bit line and the word line.