公开(公告)号：US20180166559A1

公开(公告)日：2018-06-14

申请号：US15376916

申请日：2016-12-13

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Guangle Zhou ,  Chuanbin Pan ,  Juan Saenz ,  Tanmay Kumar

IPC: H01L29/66 ,  H01L27/11521 ,  H01L27/11568 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/24 ,  H01L45/00

CPC classification number: H01L29/66666 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/2454 ,  H01L27/249 ,  H01L29/7827 ,  H01L45/04 ,  H01L45/12 ,  H01L45/1226 ,  H01L45/146 ,  H01L45/147

Abstract: A method is provided that includes forming a word line above a substrate, the word line disposed in a first direction, the word line including a first portion including a first conductive material and a second portion including a second conductive material, forming a bit line above the substrate, the bit line disposed in a second direction perpendicular to the first direction, forming a nonvolatile memory material between the word line and the bit line, the nonvolatile memory material including a semiconductor material layer and a conductive oxide material layer, the semiconductor material layer disposed adjacent the second portion of the word line, and forming a memory cell including the nonvolatile memory material at an intersection of the local bit line and the word line.

公开(公告)号：US09806256B1

公开(公告)日：2017-10-31

申请号：US15299919

申请日：2016-10-21

Applicant: SANDISK TECHNOLOGIES LLC

Inventor： Ming-Che Wu ,  Chuanbin Pan ,  Guangle Zhou ,  Tanmay Kumar

IPC: H01L45/00 ,  G11C13/00

CPC classification number: H01L45/124 ,  G11C13/0007 ,  G11C13/0026 ,  G11C13/0028 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C13/0097 ,  G11C2213/51 ,  G11C2213/52 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/085 ,  H01L45/1246 ,  H01L45/1266 ,  H01L45/146 ,  H01L45/1675

Abstract: A resistive memory device includes a first electrode, a sidewall spacer electrode located on a sidewall of a dielectric material contacting the first electrode, a resistive memory cell containing a resistive memory material and contacting the sidewall spacer electrode, and a second electrode containing the resistive memory cell.