Invention Application
- Patent Title: ATOMIC LAYER DEPOSITION FOR PHOTOVOLTAIC DEVICES
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Application No.: US15976308Application Date: 2018-05-10
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Publication No.: US20180261710A1Publication Date: 2018-09-13
- Inventor: JEEHWAN KIM , DAVID B. MITZI , BYUNGHA SHIN , TEODOR K. TODOROV , MARK T. WINKLER
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Main IPC: H01L31/0749
- IPC: H01L31/0749 ; H01L31/0216 ; H01L31/18 ; H01L31/072 ; H01L31/032

Abstract:
A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.
Public/Granted literature
- US10355160B2 Atomic layer deposition for photovoltaic devices Public/Granted day:2019-07-16
Information query
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