公开(公告)号：US20180261710A1

公开(公告)日：2018-09-13

申请号：US15976308

申请日：2018-05-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JEEHWAN KIM ,  DAVID B. MITZI ,  BYUNGHA SHIN ,  TEODOR K. TODOROV ,  MARK T. WINKLER

IPC: H01L31/0749 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/072 ,  H01L31/032

CPC classification number: H01L31/0749 ,  H01L31/02167 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50

Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

公开(公告)号：US20180261711A1

公开(公告)日：2018-09-13

申请号：US15976331

申请日：2018-05-10

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JEEHWAN KIM ,  DAVID B. MITZI ,  BYUNGHA SHIN ,  TEODOR K. TODOROV ,  MARK T. WINKLER

IPC: H01L31/0749 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/072 ,  H01L31/032

CPC classification number: H01L31/0749 ,  H01L31/02167 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50

Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

公开(公告)号：US20150263199A1

公开(公告)日：2015-09-17

申请号：US14727071

申请日：2015-06-01

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： OKI GUNAWAN ,  JEEHWAN KIM ,  DAVID B. MITZI ,  DEVENDRA K. SADANA ,  TEODOR K. TODOROV

IPC: H01L31/032 ,  H01L31/20 ,  H01L31/076 ,  C25D7/12 ,  C23C14/34

CPC classification number: H01L31/0326 ,  C23C14/34 ,  C25D7/12 ,  H01L31/076 ,  H01L31/078 ,  H01L31/18 ,  H01L31/20 ,  Y02E10/548

Abstract: A photosensitive device and method includes a top cell having an N-type layer, a P-type layer and a top intrinsic layer therebetween. A bottom cell includes an N-type layer, a P-type layer and a bottom intrinsic layer therebetween. The bottom intrinsic layer includes a Cu—Zn—Sn containing chalcogenide.

Abstract translation: 感光装置和方法包括具有N型层的顶层单元，P型层和其间的顶层本征层。 底部单元包括N型层，P型层和底层本征层。 底部本征层包括含有Cu-Zn-Sn的硫族化物。

公开(公告)号：US20150340536A1

公开(公告)日：2015-11-26

申请号：US14819007

申请日：2015-08-05

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： JEEHWAN KIM ,  DAVID B. MITZI ,  BYUNGHA SHIN ,  TEODOR K. TODOROV ,  MARK T. WINKLER

IPC: H01L31/0749 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/0749 ,  H01L31/02167 ,  H01L31/0326 ,  H01L31/072 ,  H01L31/18 ,  H01L31/1868 ,  Y02E10/50

Abstract: A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer.

Abstract translation: 光电器件和方法包括：衬底，形成在衬底上的导电层和由含有Cu-Zn-Sn的硫族化物材料形成在导电层上的吸收层。 在吸收层上形成发射极层，在包括原子层沉积（ALD）层的发射极层上形成缓冲层。 在缓冲层上形成透明导体层。