- 专利标题： SEMICONDUCTOR STRUCUTRE AND METHOD OF FABRICATING THE SAME
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申请号： US16022702申请日： 2018-06-29
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公开(公告)号： US20190148389A1公开(公告)日： 2019-05-16
- 发明人: Meng-Han Lin , Te-Hsin Chiu , Wei-Cheng Wu , Li-Feng Teng , Chien-Hung Chang
- 申请人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 申请人地址： TW Hsinchu
- 专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址： TW Hsinchu
- 主分类号： H01L27/112
- IPC分类号： H01L27/112 ; H01L29/06 ; H01L29/40 ; H01L21/765 ; H01L23/00
摘要：
A semiconductor structure including a semiconductor substrate and at least one patterned dielectric layer is provided. The semiconductor substrate includes a semiconductor portion, at least one first device, at least one second device and at least one first dummy ring. The at least one first device is disposed on a first region surrounded by the semiconductor portion. The at least one second device and the at least one first dummy ring are disposed on a second region, and the second region surrounds the first region. The at least one patterned dielectric layer covers the semiconductor substrate.
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