Invention Application
- Patent Title: 3DIC STRUCTURE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US15983064Application Date: 2018-05-17
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Publication No.: US20190355692A1Publication Date: 2019-11-21
- Inventor: Sung-Feng Yeh , Hsien-Wei Chen , Ming-Fa Chen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/56 ; H01L21/768 ; H01L21/306 ; H01L21/3105 ; H01L23/31 ; H01L23/48 ; H01L25/00

Abstract:
A 3DIC structure includes a die, a conductive terminal, and a dielectric structure. The die is bonded to a carrier through a bonding film. The conductive terminal is disposed over and electrically connected to the die. The dielectric structure comprises a first dielectric layer and a second dielectric layer. The first dielectric layer is disposed laterally aside the die. The second dielectric layer is disposed between the first dielectric layer and the bonding film, and between the die and the boding film. A second edge of the second dielectric layer is more flat than a first edge of the first dielectric layer.
Public/Granted literature
- US10475762B1 3DIC structure and method of manufacturing the same Public/Granted day:2019-11-12
Information query
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