Invention Application
- Patent Title: Thyristor Volatile Random Access Memory and Methods of Manufacture
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Application No.: US16596717Application Date: 2019-10-08
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Publication No.: US20200043930A1Publication Date: 2020-02-06
- Inventor: Harry Luan , Bruce L. Bateman , Valery Axelrad , Charlie Cheng
- Applicant: TC Lab, Inc.
- Main IPC: H01L27/102
- IPC: H01L27/102 ; H01L29/749 ; H01L29/66 ; H01L29/10 ; H01L29/16 ; H01L29/06 ; H01L21/762 ; H01L21/324 ; H01L29/45 ; H01L49/02 ; G11C11/39 ; H01L21/28 ; H01L21/321
Abstract:
A method of writing data into a volatile thyristor memory cell array and maintaining the data with refresh is disclosed.
Information query
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