Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
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Application No.: US16716384Application Date: 2019-12-16
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Publication No.: US20200119009A1Publication Date: 2020-04-16
- Inventor: YOONJAE KIM , CHEOL KIM , YONG-HOON SON , JIN-HYUK YOO , WOOJIN JUNG
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@28d17ca6
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/78 ; H01L29/66 ; H01L29/423 ; H01L29/10 ; H01L29/08 ; H01L29/06 ; H01L27/02 ; H01L21/8234 ; H01L21/311 ; H01L21/306 ; H01L21/768 ; H01L23/485
Abstract:
A semiconductor device includes a substrate having an active pattern, a conductive pattern crossing the active pattern, a spacer structure on at least one side surface of the conductive pattern, and a capping structure on the conductive pattern. The capping structure includes a first capping pattern and a second capping pattern. The second capping pattern is disposed on a top surface of the first capping pattern and a top surface of the spacer structure.
Public/Granted literature
- US10797051B2 Semiconductor device and method of manufacturing the same Public/Granted day:2020-10-06
Information query
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