- 专利标题： ANTIFERROMAGNET BASED SPIN ORBIT TORQUE MEMORY DEVICE
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申请号： US16236060申请日： 2018-12-28
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公开(公告)号： US20200212291A1公开(公告)日： 2020-07-02
- 发明人: Chia-Ching LIN , Sasikanth MANIPATRUNI , Tanay GOSAVI , Dmitri NIKONOV , Kaan OGUZ , Ian A. YOUNG
- 申请人： Intel Corporation
- 主分类号： H01L43/02
- IPC分类号： H01L43/02 ; H01L43/10 ; H01L43/12 ; H01L27/22 ; H01F10/32 ; H01L27/11 ; G11C11/16 ; G11C11/14
摘要：
A memory device comprises an interconnect comprises a spin orbit coupling (SOC) material. A free magnetic layer is on the interconnect, a barrier material is over the free magnetic layer and a fixed magnetic layer is over the barrier material, wherein the free magnetic layer comprises an antiferromagnet. In another embodiment, memory device comprises a spin orbit coupling (SOC) interconnect and an antiferromagnet (AFM) free magnetic layer is on the interconnect. A ferromagnetic magnetic tunnel junction (MTJ) device is on the AFM free magnetic layer, wherein the ferromagnetic MTJ comprises a free magnet layer, a fixed magnet layer, and a barrier material between the free magnet layer and the fixed magnet layer.
公开/授权文献
- US11621391B2 Antiferromagnet based spin orbit torque memory device 公开/授权日：2023-04-04
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