- 专利标题： HETEROJUNCTION BIPOLAR TRANSISTOR WITH MARKER LAYER
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申请号： US16909376申请日： 2020-06-23
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公开(公告)号： US20210091214A1公开(公告)日： 2021-03-25
- 发明人: Herbert HO , Vibhor JAIN , John J. PEKARIK , Claude ORTOLLAND , Judson R. HOLT , Qizhi LIU , Viorel ONTALUS
- 申请人： GLOBALFOUNDRIES U.S. INC.
- 申请人地址： US CA Santa Clara
- 专利权人： GLOBALFOUNDRIES U.S. INC.
- 当前专利权人： GLOBALFOUNDRIES U.S. INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L29/737
- IPC分类号： H01L29/737 ; H01L29/08 ; H01L29/66
摘要：
The present disclosure relates to semiconductor structures and, more particularly, to a device with a marker layer and methods of manufacture. The device includes: a collector region; an intrinsic base region above the collector region; an emitter region comprising emitter material and a marker layer vertically between the intrinsic base region and the emitter material; and an extrinsic base region in electrical contact with the intrinsic base region.
公开/授权文献
- US11217685B2 Heterojunction bipolar transistor with marker layer 公开/授权日：2022-01-04
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