公开(公告)号：US20230246093A1

公开(公告)日：2023-08-03

申请号：US17587347

申请日：2022-01-28

Applicant: GLOBALFOUNDRIES U.S. Inc.

Inventor： Viorel ONTALUS ,  Justin C. LONG ,  Robert K. BAIOCCO

IPC: H01L29/732 ,  H01L29/08 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/732 ,  H01L29/0804 ,  H01L29/1004 ,  H01L29/66287

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a bipolar transistor and methods of manufacture. The structure includes: a collector region in a semiconductor substrate; a base region adjacent to the collector region; and an emitter extending above the base region and comprising semiconductor material and a hardmask surrounding a lower portion of the semiconductor material.

公开(公告)号：US20210091214A1

公开(公告)日：2021-03-25

申请号：US16909376

申请日：2020-06-23

Applicant: GLOBALFOUNDRIES U.S. INC.

Inventor： Herbert HO ,  Vibhor JAIN ,  John J. PEKARIK ,  Claude ORTOLLAND ,  Judson R. HOLT ,  Qizhi LIU ,  Viorel ONTALUS

IPC: H01L29/737 ,  H01L29/08 ,  H01L29/66

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to a device with a marker layer and methods of manufacture. The device includes: a collector region; an intrinsic base region above the collector region; an emitter region comprising emitter material and a marker layer vertically between the intrinsic base region and the emitter material; and an extrinsic base region in electrical contact with the intrinsic base region.