Invention Application
- Patent Title: PLATING METHOD, PLATING SYSTEM, AND RECORDING MEDIUM
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Application No.: US16498503Application Date: 2018-03-22
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Publication No.: US20210108316A1Publication Date: 2021-04-15
- Inventor: Nobutaka Mizutani , Kazutoshi Iwai
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2017-072410 20170331
- International Application: PCT/JP2018/011364 WO 20180322
- Main IPC: C23C18/18
- IPC: C23C18/18 ; C23C18/16

Abstract:
A substrate processing method includes preparing a substrate having, on a surface thereof, a first portion made of a silicon compound including nitrogen and a second portion made of a material different from the first portion; forming a SAM (Self-Assembled Monolayer) on the surface of the substrate; imparting a catalyst to the substrate by supplying a catalyst containing liquid onto the substrate on which the SAM is formed; and performing a plating on the substrate to which the catalyst is imparted. The forming of the SAM is carried out by supplying a SAM forming chemical, which does not have a functional group including nitrogen, onto the substrate.
Information query
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