公开(公告)号：US20210108316A1

公开(公告)日：2021-04-15

申请号：US16498503

申请日：2018-03-22

Applicant: Tokyo Electron Limited

Inventor： Nobutaka Mizutani ,  Kazutoshi Iwai

IPC: C23C18/18 ,  C23C18/16

Abstract: A substrate processing method includes preparing a substrate having, on a surface thereof, a first portion made of a silicon compound including nitrogen and a second portion made of a material different from the first portion; forming a SAM (Self-Assembled Monolayer) on the surface of the substrate; imparting a catalyst to the substrate by supplying a catalyst containing liquid onto the substrate on which the SAM is formed; and performing a plating on the substrate to which the catalyst is imparted. The forming of the SAM is carried out by supplying a SAM forming chemical, which does not have a functional group including nitrogen, onto the substrate.

公开(公告)号：US20200325581A1

公开(公告)日：2020-10-15

申请号：US16914652

申请日：2020-06-29

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Nobutaka Mizutani ,  Yuichiro Inatomi ,  Takashi Tanaka

IPC: C23C18/34 ,  C23C18/16

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

公开(公告)号：US10784111B2

公开(公告)日：2020-09-22

申请号：US16345385

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: C23C18/16 ,  C23C18/28 ,  C23C18/30 ,  C23C18/18 ,  H01L21/288

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.

公开(公告)号：US20190267242A1

公开(公告)日：2019-08-29

申请号：US16345385

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: H01L21/288 ,  C23C18/16 ,  C23C18/28

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.

公开(公告)号：US11028483B2

公开(公告)日：2021-06-08

申请号：US16344932

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: C23C18/18 ,  C23C18/16 ,  C23C18/34 ,  H01L21/3065 ,  H01L21/033 ,  H01L21/3205

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.

公开(公告)号：US20190256980A1

公开(公告)日：2019-08-22

申请号：US16344932

申请日：2017-08-29

Applicant: Tokyo Electron Limited

Inventor： Yuichiro Inatomi ,  Takashi Tanaka ,  Kazutoshi Iwai

IPC: C23C18/18 ,  C23C18/34 ,  H01L21/3065 ,  C23C18/16

Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.

公开(公告)号：US20170287713A1

公开(公告)日：2017-10-05

申请号：US15473810

申请日：2017-03-30

Applicant: Tokyo Electron Limited

Inventor： Mitsuaki Iwashita ,  Takeshi Nagao ,  Nobutaka Mizutani ,  Takashi Tanaka ,  Koichi Yatsuda ,  Kazutoshi Iwai ,  Yuichiro Inatomi

IPC: H01L21/033 ,  C23C14/04 ,  C23C16/04 ,  H01L21/308 ,  C23C18/16

CPC classification number: H01L21/0332 ,  C23C14/042 ,  C23C16/042 ,  C23C18/1603 ,  C23C18/1605 ,  C23C18/1619 ,  C23C18/163 ,  C23C18/1632 ,  C23C18/1639 ,  C23C18/1642 ,  C23C18/1675 ,  C23C18/1893 ,  C23C18/32 ,  C23C18/50 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

公开(公告)号：US09650717B2

公开(公告)日：2017-05-16

申请号：US14633319

申请日：2015-02-27

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Nobutaka Mizutani ,  Mitsuaki Iwashita

IPC: C23C18/18 ,  C23C18/16

CPC classification number: C23C18/1865 ,  C23C18/165 ,  C23C18/1651 ,  C23C18/1675 ,  C23C18/1817 ,  C23C18/1844 ,  C23C18/1893

Abstract: A pre-treatment method of plating and a plating system can perform a uniform plating process in which sufficient adhesivity on a surface of a substrate is obtained. The pre-treatment method of plating includes a coupling layer forming process of forming a titanium-based coupling layer 21b on the surface of the substrate with a titanium coupling agent; and a coupling layer modification process of modifying a surface of the titanium-based coupling layer 21b with a modifying liquid after the coupling layer forming process.

公开(公告)号：US10731256B2

公开(公告)日：2020-08-04

申请号：US15479429

申请日：2017-04-05

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Nobutaka Mizutani ,  Yuichiro Inatomi ,  Takashi Tanaka

IPC: C23C18/34 ,  C23C18/16

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.

公开(公告)号：US20170292192A1

公开(公告)日：2017-10-12

申请号：US15479429

申请日：2017-04-05

Applicant: Tokyo Electron Limited

Inventor： Kazutoshi Iwai ,  Nobutaka Mizutani ,  Yuichiro Inatomi ,  Takashi Tanaka

IPC: C23C18/34 ,  C23C18/16

Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.