-
公开(公告)号：US10179950B2
公开(公告)日：2019-01-15
申请号：US15184215
申请日：2016-06-16
IPC分类号： C23C18/50 , C23C18/38 , C23C18/16 , C23C18/32 , H01L21/768 , H01L21/288 , C23C18/18
摘要： Reliability of a plating process and reliability of a component manufactured through the plating process can be improved by suppressing peeling between plating layers formed by electroless plating. In a plating method, a plated component manufactured by the plating method, and a plating system 1 configured to manufacture the plated component by the plating method, a second electroless plating layer 39, which is made of a copper alloy and formed by the electroless plating, is formed on a surface of a first electroless plating layer 38 formed by the electroless plating. The first electroless plating layer 38 is a barrier layer configured to suppress diffusion of copper and is made of cobalt or a cobalt alloy. The second electroless plating layer 39 is a seed layer for forming an electrolytic plating layer of copper on a surface thereof and is made of an alloy of copper and nickel.
-
公开(公告)号：US20170287713A1
公开(公告)日：2017-10-05
申请号：US15473810
申请日：2017-03-30
发明人： Mitsuaki Iwashita , Takeshi Nagao , Nobutaka Mizutani , Takashi Tanaka , Koichi Yatsuda , Kazutoshi Iwai , Yuichiro Inatomi
IPC分类号： H01L21/033 , C23C14/04 , C23C16/04 , H01L21/308 , C23C18/16
CPC分类号： H01L21/0332 , C23C14/042 , C23C16/042 , C23C18/1603 , C23C18/1605 , C23C18/1619 , C23C18/163 , C23C18/1632 , C23C18/1639 , C23C18/1642 , C23C18/1675 , C23C18/1893 , C23C18/32 , C23C18/50 , H01L21/3081 , H01L21/31144 , H01L21/32139
摘要： A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.
-
3.发明授权公开(公告)号：US09653354B2
公开(公告)日：2017-05-16
申请号：US15029655
申请日：2014-10-14
IPC分类号： H01L21/4763 , H01L21/768 , C23C18/32 , H01L21/288 , H01L23/532 , C23C18/18 , C23C18/16 , C23C18/31
CPC分类号： H01L21/76879 , C23C18/1633 , C23C18/1844 , C23C18/31 , C23C18/32 , H01L21/288 , H01L21/76814 , H01L21/76826 , H01L21/76843 , H01L21/7685 , H01L21/76864 , H01L21/76874 , H01L23/53257 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal wiring layer can be formed within a recess of a substrate while suppressing the metal wiring layer from being formed at the outside of the recess. A metal wiring layer forming method includes forming a catalyst layer 5 formed of Pd on a tungsten layer W on a bottom surface 3a of the recess 3 of the substrate 2 without forming the catalyst layer 5 on a surface 3b of an insulating layer of the recess 3; and forming a Ni-based metal wiring layer 7 on the catalyst layer 5 of the recess 3.
-
公开(公告)号：US09650717B2
公开(公告)日：2017-05-16
申请号：US14633319
申请日：2015-02-27
CPC分类号： C23C18/1865 , C23C18/165 , C23C18/1651 , C23C18/1675 , C23C18/1817 , C23C18/1844 , C23C18/1893
摘要： A pre-treatment method of plating and a plating system can perform a uniform plating process in which sufficient adhesivity on a surface of a substrate is obtained. The pre-treatment method of plating includes a coupling layer forming process of forming a titanium-based coupling layer 21b on the surface of the substrate with a titanium coupling agent; and a coupling layer modification process of modifying a surface of the titanium-based coupling layer 21b with a modifying liquid after the coupling layer forming process.
-
5.发明申请ELECTROLESS PLATING METHOD, ELECTROLESS PLATING APPARATUS AND STORAGE MEDIUM 审中-公开电沉积方法，电镀镀层设备和储存介质公开(公告)号：US20150218702A1
公开(公告)日：2015-08-06
申请号：US14609848
申请日：2015-01-30
CPC分类号： C23C18/1608 , C23C18/1619 , C23C18/165 , C23C18/1651 , C23C18/1831 , C23C18/32 , C23C18/54
摘要： A multiple number of accurately-patterned metal layers can be formed on a substrate. On a substrate 11, a patterned first metal layer 12 is formed (see FIG. 1A), and then, a metal sacrificial layer 15 is formed on the first metal layer 12 (see FIG. 1B). Further, an aqueous solution containing an ionized metal allowed to be substituted with a metal of the metal sacrificial layer 15 is coated on the metal sacrificial layer 15, so that a catalyst layer 16 is formed on the metal sacrificial layer 15 (see FIG. 1E) . Thereafter, a second metal layer 18 is formed on the catalyst layer 16 by performing an electroless plating process (see FIG. 1F). Furthermore, the substrate 11 is etched by using the second metal layer 18 as a mask.
摘要翻译： 可以在基板上形成多个精确图案化的金属层。 在基板11上形成图案化的第一金属层12（参照图1A），然后在第一金属层12（参照图1B）上形成金属牺牲层15。 此外，在金属牺牲层15上涂布含有允许被金属牺牲层15的金属取代的电离金属的水溶液，从而在金属牺牲层15上形成催化剂层16（参见图1E ）。 此后，通过进行无电镀处理（参照图1F），在催化剂层16上形成第二金属层18。 此外，通过使用第二金属层18作为掩模来蚀刻基板11。
-
公开(公告)号：US20150167174A1
公开(公告)日：2015-06-18
申请号：US14404174
申请日：2013-05-27
CPC分类号： C23C18/1875 , C23C18/1616 , C23C18/1619 , C23C18/1676 , C23C18/168 , H01L21/288 , H01L21/76843 , H01L21/76898
摘要： A plating method can improve uniformity in thickness of a plating layer formed on an inner surface of a recess. The plating method includes a loading process of loading the substrate in which the recess is formed into a casing; and a plating process of supplying a plating liquid to the substrate and forming a plating layer having a specific function on an inner surface of the recess. In the plating process, after supplying the plating liquid to the substrate and filling the plating liquid into the recess, a plating liquid having a higher temperature than a temperature of the plating liquid is supplied to the substrate.
摘要翻译： 电镀方法可以提高形成在凹部的内表面上的镀层的厚度的均匀性。 电镀方法包括将形成有凹部的基板装载到壳体中的装载工序; 以及向所述基板供给电镀液体并在所述凹部的内表面形成具有特定功能的镀层的电镀工序。 在电镀工序中，在将电镀液供给到基板并将电镀液填充到凹部中之后，将具有比电镀液的温度更高的温度的电镀液供给到基板。
-
公开(公告)号：US20150030774A1
公开(公告)日：2015-01-29
申请号：US14384495
申请日：2013-02-22
CPC分类号： C23C18/1694 , C23C18/1619 , C23C18/1632 , C23C18/1651 , C23C18/1653 , C23C18/1676 , C23C18/1678 , C23C18/1696 , C23C18/18 , C23C18/1889 , C23C18/30 , C23C18/38 , C25D17/001 , H01L21/288 , H01L21/76843 , H01L21/76864 , H01L21/76874 , H01L21/76898 , H01L23/481 , H01L2924/0002 , H01L2924/00
摘要： A plating method can improve adhesivity with an underlying layer. The plating method of performing a plating process on a substrate includes forming a first plating layer 23a serving as a barrier film on a substrate 2; baking the first plating layer 23a; forming a second plating layer 23b serving as a barrier film; and baking the second plating layer 23b. A plating layer stacked body 23 serving as a barrier film is formed of the first plating layer 23a and the second plating layer 23b.
摘要翻译： 电镀方法可以改善与下层的粘合性。 在基板上进行电镀处理的电镀方法包括在基板2上形成作为阻挡膜的第一镀层23a; 烘烤第一镀层23a; 形成用作阻挡膜的第二镀层23b; 并烘烤第二镀层23b。 用作阻挡膜的镀层层叠体23由第一镀层23a和第二镀层23b形成。
-
公开(公告)号：US10731256B2
公开(公告)日：2020-08-04
申请号：US15479429
申请日：2017-04-05
摘要： A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.
-
公开(公告)号：US09888585B2
公开(公告)日：2018-02-06
申请号：US14865143
申请日：2015-09-25
CPC分类号： H05K3/422 , H05K1/0306 , H05K3/0017 , H05K3/0044 , H05K3/247 , H05K3/421 , H05K2201/035 , H05K2203/025 , H05K2203/073
摘要： Adhesion of an underlying diffusion barrier metal film and an electroless copper plating film with respect to an insulating film can be improved. A method for manufacturing a wiring structure includes a process of forming the underlying diffusion barrier metal film 5, including a base metal with respect to copper, on the insulating film 1; and a process of forming the electroless copper plating film 6 on the underlying diffusion barrier metal film 5 by performing an electroless copper displacement plating process with a copper displacement plating solution. The copper displacement plating solution is an acidic copper displacement plating solution of pH1 to pH4, in which copper ions are contained but a reducing agent for reducing the copper ions is not contained.
-
公开(公告)号：US09837308B2
公开(公告)日：2017-12-05
申请号：US14384861
申请日：2013-02-22
IPC分类号： H01L21/768 , H01L21/288 , C23C18/18 , C23C18/16 , C23C18/38 , C23C14/02 , C23C16/02 , C23C28/00 , C23C14/24 , C23C14/04 , C23C16/04
CPC分类号： H01L21/76867 , C23C14/024 , C23C14/046 , C23C14/24 , C23C16/0272 , C23C16/045 , C23C18/1619 , C23C18/1632 , C23C18/165 , C23C18/1651 , C23C18/1653 , C23C18/1692 , C23C18/1694 , C23C18/1844 , C23C18/1893 , C23C18/38 , C23C28/322 , C23C28/34 , H01L21/288 , H01L21/76841 , H01L21/76843 , H01L21/76873 , H01L21/76874 , H01L21/76898
摘要： A plating method can improve adhesivity with a substrate. The plating method of performing a plating process on the substrate includes forming a vacuum-deposited layer 2A on the substrate 2 by performing a vacuum deposition process on the substrate 2; forming an adhesion layer 21 and a catalyst adsorption layer 22 on the vacuum-deposited layer 2A of the substrate 2; and forming a plating layer stacked body 23 having a first plating layer 23a and a second plating layer 23b which function as a barrier film on the catalyst adsorption layer 22 of the substrate 2. By forming the vacuum-deposited layer 2A, a surface of the substrate 2 can be smoothened, so that the vacuum-deposited layer 2A serving as an underlying layer can improve the adhesivity.
-
-
-
-
-
-
-
-
-
搜索结果
41 条记录 (耗时 0.026 秒)
