- 专利标题: SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF FABRICATING THE SAME
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申请号: US17036090申请日: 2020-09-29
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公开(公告)号: US20210159378A1公开(公告)日: 2021-05-27
- 发明人: Donggun LEE , Gibum KIM , Joosung KIM , Juhyun KIM , Tan SAKONG , Jonguk SEO , Youngjo TAK
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2019-0153550 20191126
- 主分类号: H01L33/62
- IPC分类号: H01L33/62 ; H01L33/38 ; H01L33/54 ; H01L33/48
摘要:
A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.
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