-
公开(公告)号：US20210242370A1
公开(公告)日：2021-08-05
申请号：US17032332
申请日：2020-09-25
发明人： Donggun LEE , Gibum KIM , Joosung KIM , Jonguk SEO
摘要： A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.
-
公开(公告)号：US20210408327A1
公开(公告)日：2021-12-30
申请号：US17352708
申请日：2021-06-21
发明人： Youngjo TAK , Joosung KIM , Jonguk SEO , Sungjin AHN , Donggun LEE , Jeongwook LEE , Youngjin CHOI , Yongseok CHOI , Jonghoon HA
摘要： A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.
-
公开(公告)号：US20210159378A1
公开(公告)日：2021-05-27
申请号：US17036090
申请日：2020-09-29
发明人： Donggun LEE , Gibum KIM , Joosung KIM , Juhyun KIM , Tan SAKONG , Jonguk SEO , Youngjo TAK
摘要： A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.
-
公开(公告)号：US20230238485A1
公开(公告)日：2023-07-27
申请号：US17900269
申请日：2022-08-31
发明人： Jonguk SEO , Donggun LEE , Jonghyun LEE , Myunggoo CHEONG , Seungwan CHAE , Youngjo TAK
CPC分类号： H01L33/32 , H01L33/10 , H01L33/382 , H01L33/62
摘要： A light emitting device includes a first light transmitting layer, a second light transmitting layer provided on the first light transmitting layer, a plurality of mesa structures provided on the second light transmitting layer and configured to generate light in an ultraviolet band, and passivation patterns provided on side surfaces of the plurality of mesa structures. Each of the plurality of mesa structures includes a first epitaxial pattern including an aluminum gallium nitride, a second epitaxial pattern provided on the first epitaxial pattern and including an aluminum gallium nitride, a third epitaxial pattern provided on the second epitaxial pattern and including an aluminum gallium nitride, and a fourth epitaxial pattern provided on the third epitaxial pattern and including a gallium nitride. A horizontal width of each of the plurality of mesa structures is in a range of about 5 μm to about 30 μm.
-
公开(公告)号：US20220140189A1
公开(公告)日：2022-05-05
申请号：US17371286
申请日：2021-07-09
发明人： Donggun LEE , Jonguk SEO
摘要： A nitride semiconductor light emitting device includes: a semiconductor laminate having a first conductivity-type semiconductor layer and a lattice buffer layer in which InGaN layers and GaN layers are alternately stacked, the semiconductor laminate having a columnar body portion protruding through etching of a peripheral region, an insulating layer covering the semiconductor laminate and having an opening at an upper surface of the body portion, and a light emitting structure including a second conductivity-type semiconductor disposed on the upper surface the body portion and selectively grown in the lattice buffer layer to have a side surface inclined with respect to the upper surface of the body portion, an active layer covering the second conductive semiconductor layer, and a third conductivity-type semiconductor layer covering the active layer and contacting the insulating layer.
-
公开(公告)号：US20210242369A1
公开(公告)日：2021-08-05
申请号：US17022496
申请日：2020-09-16
发明人： Youngjin CHOI , Joosung KIM , Jonguk SEO , Sungjin AHN , Donggun LEE , Jeongwook LEE , Yongseok CHOI , Youngjo TAK , Jonghoon HA
摘要： A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.
-
公开(公告)号：US20210159365A1
公开(公告)日：2021-05-27
申请号：US16935356
申请日：2020-07-22
发明人： Jongin YANG , Yongil KIM , Juhyun KIM , Tan SAKONG , Jonguk SEO , Suhyun JO
摘要： Semiconductor light emitting devices and methods of fabricating the same are provided. The semiconductor light emitting device includes a light emitting structure, a first electrode, a first dielectric layer, a second electrode, and a vertical conductive pattern. The light emitting structure includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially stacked, and includes a first opening that penetrates the second semiconductor layer and the active layer, the first opening exposing the first semiconductor layer. The first electrode fills at least a portion of the first opening. The first dielectric layer is on the first electrode. The second electrode is on the light emitting structure and covers the first dielectric layer, the second electrode being electrically connected to the second semiconductor layer. The vertical conductive pattern surrounds outer lateral surfaces of the light emitting structure and is electrically connected to the first electrode.
-
-
-
-
-
-
搜索结果
7 条记录 (耗时 0.019 秒)
