公开(公告)号：US20180174822A1

公开(公告)日：2018-06-21

申请号：US15656305

申请日：2017-07-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjo TAK ,  Sammook KANG ,  Mihyun KIM ,  Junyoun KIM

IPC: H01L21/02

CPC classification number: H01L21/0254 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02664

Abstract: A method of fabricating a nitride semiconductor substrate including forming a buffer layer on a surface of a growth substrate, growing a first nitride semiconductor layer on the buffer layer, growing a second nitride semiconductor layer on the first nitride semiconductor layer, and removing the growth substrate may be provided. The forming a buffer layer may deform the surface of the growth substrate to have a convex shape. The forming a buffer layer and the growing a first nitride semiconductor layer may be performed within a first process chamber. The growing a second nitride semiconductor layer and the removing the growth substrate may be performed within a second process chamber.

公开(公告)号：US20210408327A1

公开(公告)日：2021-12-30

申请号：US17352708

申请日：2021-06-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjo TAK ,  Joosung KIM ,  Jonguk SEO ,  Sungjin AHN ,  Donggun LEE ,  Jeongwook LEE ,  Youngjin CHOI ,  Yongseok CHOI ,  Jonghoon HA

IPC: H01L33/14 ,  H01L33/38 ,  H01L33/44

Abstract: A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.

公开(公告)号：US20210159378A1

公开(公告)日：2021-05-27

申请号：US17036090

申请日：2020-09-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Donggun LEE ,  Gibum KIM ,  Joosung KIM ,  Juhyun KIM ,  Tan SAKONG ,  Jonguk SEO ,  Youngjo TAK

IPC: H01L33/62 ,  H01L33/38 ,  H01L33/54 ,  H01L33/48

Abstract: A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other, each of the plurality of light-emitting device structures including a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, a second conductivity type semiconductor layer on the active layer, a first electrode connected to the first conductivity type semiconductor layer, and a second electrode connected to the second conductivity type semiconductor layer, and a partition wall structure between two adjacent light-emitting device structures of the plurality of light-emitting device structures, the partition wall structure defining a pixel space.

公开(公告)号：US20230238485A1

公开(公告)日：2023-07-27

申请号：US17900269

申请日：2022-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonguk SEO ,  Donggun LEE ,  Jonghyun LEE ,  Myunggoo CHEONG ,  Seungwan CHAE ,  Youngjo TAK

IPC: H01L33/32 ,  H01L33/10 ,  H01L33/38 ,  H01L33/62

CPC classification number: H01L33/32 ,  H01L33/10 ,  H01L33/382 ,  H01L33/62

Abstract: A light emitting device includes a first light transmitting layer, a second light transmitting layer provided on the first light transmitting layer, a plurality of mesa structures provided on the second light transmitting layer and configured to generate light in an ultraviolet band, and passivation patterns provided on side surfaces of the plurality of mesa structures. Each of the plurality of mesa structures includes a first epitaxial pattern including an aluminum gallium nitride, a second epitaxial pattern provided on the first epitaxial pattern and including an aluminum gallium nitride, a third epitaxial pattern provided on the second epitaxial pattern and including an aluminum gallium nitride, and a fourth epitaxial pattern provided on the third epitaxial pattern and including a gallium nitride. A horizontal width of each of the plurality of mesa structures is in a range of about 5 μm to about 30 μm.

公开(公告)号：US20210242369A1

公开(公告)日：2021-08-05

申请号：US17022496

申请日：2020-09-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngjin CHOI ,  Joosung KIM ,  Jonguk SEO ,  Sungjin AHN ,  Donggun LEE ,  Jeongwook LEE ,  Yongseok CHOI ,  Youngjo TAK ,  Jonghoon HA

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/42 ,  H01L27/15

Abstract: A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.