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公开(公告)号：US20240234628A1
公开(公告)日：2024-07-11
申请号：US18224255
申请日：2023-07-20
发明人： Dongchul SHIN , Joosung KIM , Younghwan PARK , Junhee CHOI
摘要： A nitride-based semiconductor light-emitting device, including a first semiconductor layer, wherein the first semiconductor layer is nitride-based and has a first conductivity type; a light-emitting layer provided on the first semiconductor layer, wherein the light-emitting layer may include a nitride-based semiconductor including Indium (In); a second semiconductor layer provided on the light-emitting layer, wherein the second semiconductor layer is nitride-based and has a second conductivity type; and a strain relaxation layer provided between the first semiconductor layer and the light-emitting layer, and including an AlGaN layer having a protrusion whose horizontal cross-section area decreases as the protrusion extends in a vertical direction from the second semiconductor layer to the first semiconductor layer.
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公开(公告)号：US20210242370A1
公开(公告)日：2021-08-05
申请号：US17032332
申请日：2020-09-25
发明人： Donggun LEE , Gibum KIM , Joosung KIM , Jonguk SEO
摘要： A semiconductor light emitting device includes a light emitting structure in the form of a rod, including a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, and having a first surface, a second surface opposing the first surface, and a side surface connecting the first and second surfaces; a regrowth semiconductor layer surrounding an entire side surface of the light emitting structure and having a first thickness in a first position along a perimeter of the side surface and a second thickness, different from the first thickness, in a second position along a perimeter of the side surface; a first electrode on the first surface of the light emitting structure and connected to the first conductivity-type semiconductor layer; and a second electrode on the second surface of the light emitting structure and connected to the second conductivity-type semiconductor layer.
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3.发明公开公开(公告)号：US20240038822A1
公开(公告)日：2024-02-01
申请号：US18120862
申请日：2023-03-13
发明人： Junhee CHOI , Kiho KONG , Joosung KIM , Younghwan PARK , Jinjoo PARK , Dongchul SHIN
IPC分类号： H01L27/15
CPC分类号： H01L27/156
摘要： A light emitting structure includes: a substrate; a first epitaxial structure disposed on the substrate; a second epitaxial structure disposed on the first epitaxial structure; and a third epitaxial structure disposed on the second epitaxial structure. Each of the first epitaxial structure, the second epitaxial structure, and the third epitaxial structure comprises, in a sequentially stacked structure, a first semiconductor layer of a first conductivity, a carrier blocking layer, an active layer, and a second semiconductor layer of a second conductivity.
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公开(公告)号：US20210242369A1
公开(公告)日：2021-08-05
申请号：US17022496
申请日：2020-09-16
发明人： Youngjin CHOI , Joosung KIM , Jonguk SEO , Sungjin AHN , Donggun LEE , Jeongwook LEE , Yongseok CHOI , Youngjo TAK , Jonghoon HA
摘要： A three-dimensionally structured semiconductor light emitting diode includes a first conductivity-type semiconductor rod having integral first and second portions, the first portion defining a first surface, the second portion defining a second surface opposite the first surface, and a side surface between the first and second surfaces, an active layer and a second conductivity-type semiconductor layer on the side surface of the first conductivity-type semiconductor rod, the active layer and the second conductivity-type semiconductor layer being on the second portion of the first conductivity-type semiconductor rod, an insulating cap layer on the second surface of the first conductivity-type semiconductor rod, a transparent electrode layer on the second conductivity-type semiconductor layer, and a passivation layer on the transparent electrode layer and exposing a portion of the transparent electrode layer, the passivation layer extending to cover ends of the active layer and the second conductivity-type semiconductor layer adjacent to the first surface.
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公开(公告)号：US20240266468A1
公开(公告)日：2024-08-08
申请号：US18408236
申请日：2024-01-09
发明人： Joohun HAN , Junhee CHOI , Kiho KONG , Joosung KIM , Hyochul KIM , Eunsung LEE
CPC分类号： H01L33/24 , H01L25/0753 , H01L33/0075 , H01L33/0095 , H01L33/10 , H01L33/22 , H01L33/32 , H01L33/44
摘要： Provided is a nanorod light-emitting device having improved luminous efficiency by reducing surface defects. The nanorod light-emitting device includes a semiconductor light-emitting structure having a nanorod shape, a surface activation layer provided on a sidewall of the semiconductor light-emitting structure, and an epitaxial passivation layer provided on the surface activation layer.
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公开(公告)号：US20240038820A1
公开(公告)日：2024-02-01
申请号：US18085806
申请日：2022-12-21
发明人： Jinjoo PARK , Joosung KIM , Younghwan PARK , Dongchul SHIN
CPC分类号： H01L27/156 , H01L33/08 , H01L33/06 , H01L33/32
摘要： A light-emitting device includes a base semiconductor layer, a three-dimensional (3D) light-emitting structure, and a flat light-emitting structure formed in a flat shape, wherein the flat light-emitting structure generates light having a different wavelength than that of the 3D light-emitting structure. A strain-relieving layer relieving lattice mismatch between the base semiconductor layer and the flat light-emitting structure may be arranged on the base semiconductor layer in an area in which at least the flat light-emitting structure is formed.
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公开(公告)号：US20230275378A1
公开(公告)日：2023-08-31
申请号：US18115552
申请日：2023-02-28
发明人： Joosung KIM , Hyoseok NA , Doil KU , Sanguk KIM
IPC分类号： H01R24/40 , H01R9/05 , H01R13/622 , H01R12/71
CPC分类号： H01R24/40 , H01R9/0524 , H01R13/622 , H01R12/71 , H01R2103/00
摘要： An electronic device includes a printed circuit board having a first opening; at least one receptacle provided in the printed circuit board and adjacent to the first opening; an electrical connection member coupled to the at least one receptacle and configured to be separable from the at least one receptacle; and at least one boss structure provided in the first opening and protruding from the electrical connection member toward the printed circuit board.
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公开(公告)号：US20210408327A1
公开(公告)日：2021-12-30
申请号：US17352708
申请日：2021-06-21
发明人： Youngjo TAK , Joosung KIM , Jonguk SEO , Sungjin AHN , Donggun LEE , Jeongwook LEE , Youngjin CHOI , Yongseok CHOI , Jonghoon HA
摘要： A semiconductor light emitting device is provided. The device includes a light emitting structure stack including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; and a field control structure on a sidewall of the light emitting structure stack, the field control structure including a field control electrode on a sidewall of the active layer; and a dielectric layer between the field control electrode and the active layer.
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公开(公告)号：US20240072100A1
公开(公告)日：2024-02-29
申请号：US18214736
申请日：2023-06-27
发明人： Jinjoo PARK , Joosung KIM , Younghwan PARK , Dongchul SHIN
IPC分类号： H01L27/15
CPC分类号： H01L27/156
摘要： A multi-wavelength light-emitting device configured to emit light of a first wavelength, light of a second wavelength, and a third wavelength, includes a substrate, a first type semiconductor layer provided on the substrate, an active layer provided on the first type semiconductor layer, a second type semiconductor layer provided on the active layer, and an electrode provided on the second type semiconductor layer. The active layer includes a first active area configured to emit the light of the first wavelength, a second active area configured to emit the light of the second wavelength, and a third active area configured to emit the light of the third wavelength.
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公开(公告)号：US20240047614A1
公开(公告)日：2024-02-08
申请号：US18118993
申请日：2023-03-08
发明人： Joosung KIM , Younghwan PARK , Jinjoo PARK , Dongchul SHIN
CPC分类号： H01L33/325 , H01L33/12 , H01L33/04 , H01L33/0075
摘要： A light emitting device includes a light emitting device includes: a first nitride semiconductor layer doped with an n-type dopant and having a first lattice constant; an active layer provided on the first nitride semiconductor layer and having a second lattice constant greater than the first lattice constant, the active layer including a nitride semiconductor material including indium; a stress relaxation layer interposed between the first nitride semiconductor layer and the active layer and having a third lattice constant between the first lattice constant and the second lattice constant, the stress relaxation layer including a nitride semiconductor material including indium; and a second nitride semiconductor layer provide on the active layer and doped with a p-type dopant, wherein the active layer includes: an upper active region provided on an upper surface of the stress relaxation layer, and a side active region provided on a side surface of the stress relaxation layer.
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