- 专利标题: LINE PATTERNING IN INTEGRATED CIRCUIT DEVICES
-
申请号: US16713867申请日: 2019-12-13
-
公开(公告)号: US20210183761A1公开(公告)日: 2021-06-17
- 发明人: Reken Patel , Mohit K. Haran , Jeremy J. Guttman , Shyam B. Kadali , Ruth Amy Brain , Seyedhamed M Barghi , Zhenjun Zhang , James Jeong , Robert M. Bigwood , Charles Henry Wallace
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L23/528
- IPC分类号: H01L23/528 ; H01L21/768 ; H01L21/311
摘要:
Disclosed herein are line patterning techniques for integrated circuit (IC) devices, as well as related devices and assemblies In some embodiments, a patterned line region of an IC device may include: a first conductive line; a second conductive line parallel to the first conductive line; a conductive bridge between the first conductive line and the second conductive line, wherein the conductive bridge is coplanar with the first conductive line and the second conductive line; and pitch-division artifacts.
信息查询
IPC分类: