- 专利标题: INTEGRATED CIRCUIT STRUCTURES INCLUDING BACKSIDE VIAS
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申请号: US16728111申请日: 2019-12-27
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公开(公告)号: US20210202472A1公开(公告)日: 2021-07-01
- 发明人: Nicholas A. Thomson , Kalyan C. Kolluru , Adam Clay Faust , Frank Patrick O'Mahony , Ayan Kar , Rui Ma
- 申请人: Intel Corporation
- 申请人地址: US CA Santa Clara
- 专利权人: Intel Corporation
- 当前专利权人: Intel Corporation
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H01L27/02
- IPC分类号: H01L27/02
摘要:
Disclosed herein are integrated circuit (IC) structures including backside vias, as well as related methods and devices. In some embodiments, an IC structure may include: a device layer, wherein the device layer includes a plurality of active devices; a first metallization layer over the device layer, wherein the first metallization layer includes a first conductive pathway in conductive contact with at least one of the active devices in the device layer; a second metallization layer under the device layer, wherein the second metallization layer includes a second conductive pathway; and a conductive via in the device layer, wherein the conductive via is in conductive contact with at least one of the active devices in the device layer and also in conductive contact with the second conductive pathway.
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