- 专利标题: MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME
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申请号: US17411421申请日: 2021-08-25
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公开(公告)号: US20210383848A1公开(公告)日: 2021-12-09
- 发明人: Byunghoon JEONG , Kyungtae KANG , Jangwoo LEE , Jeongdon IHM
- 申请人: Samsung Electronics Co., Ltd.
- 申请人地址: KR Suwon-si
- 专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人: Samsung Electronics Co., Ltd.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR10-2019-0123349 20191004
- 主分类号: G11C7/22
- IPC分类号: G11C7/22 ; G11C7/10 ; G11C8/18 ; G11C29/42 ; H03K19/173
摘要:
A memory device includes a memory cell array configured to store data; and a data output circuit configured to transmit status data to an external device through at least one data line in a latency period in response to a read enable signal received from the external device and transmit the data read from the memory cell array to the external device through the at least one data line in a period subsequent to the latency period.
公开/授权文献
- US11562780B2 Memory device and memory system including the same 公开/授权日:2023-01-24
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