Invention Application
- Patent Title: SILICON NITRIDE AND SILICON OXIDE DEPOSITION METHODS USING FLUORINE INHIBITOR
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Application No.: US17360972Application Date: 2021-06-28
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Publication No.: US20220005693A1Publication Date: 2022-01-06
- Inventor: Takashi Mizoguchi , Eiichiro Shiba , Shinya Ueda , Sunja Kim
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Main IPC: H01L21/033
- IPC: H01L21/033 ; H01L21/02 ; H01J37/32 ; C23C16/50 ; C23C16/40 ; C23C16/34 ; C23C16/52 ; C23C16/455
Abstract:
Methods of depositing material on a surface of a substrate are disclosed. The methods include using a fluorine reactant to reduce a growth rate per cycle of silicon oxide and/or silicon nitride deposited onto a surface of a substrate.
Information query
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