公开(公告)号：US20220310387A1

公开(公告)日：2022-09-29

申请号：US17701433

申请日：2022-03-22

Applicant: ASM IP Holding B.V.

Inventor： WanGyu Lim ,  HeeSung Kang ,  JaeOk Ko ,  JaeBin Ahn ,  Sunja Kim ,  YoungJae Kim ,  DongHyun Ko

IPC: H01L21/02 ,  H01L21/764

Abstract: A substrate processing method of forming an air gap includes: forming deposition inhibitor sites in a lower space between a first protrusion and a second protrusion; and forming film-forming sites and an interlayer insulating layer on the first protrusion and the second protrusion, wherein the interlayer insulating layer is selectively formed in an upper space between the first protrusion and the second protrusion by the deposition inhibitor sites and the film-forming layer, and thus an air gap is formed between the first protrusion and the second protrusion.

公开(公告)号：US20220005693A1

公开(公告)日：2022-01-06

申请号：US17360972

申请日：2021-06-28

Applicant: ASM IP Holding B.V.

Inventor： Takashi Mizoguchi ,  Eiichiro Shiba ,  Shinya Ueda ,  Sunja Kim

IPC: H01L21/033 ,  H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34 ,  C23C16/52 ,  C23C16/455

Abstract: Methods of depositing material on a surface of a substrate are disclosed. The methods include using a fluorine reactant to reduce a growth rate per cycle of silicon oxide and/or silicon nitride deposited onto a surface of a substrate.

公开(公告)号：US12027365B2

公开(公告)日：2024-07-02

申请号：US17530983

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Sunja Kim ,  Viljami Pore ,  Jia Li Yao ,  Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/40 ,  C23C16/455 ,  H01J37/32 ,  H01L21/762

CPC classification number: H01L21/02315 ,  C23C16/0254 ,  C23C16/401 ,  C23C16/45536 ,  C23C16/45553 ,  H01J37/3244 ,  H01J37/32724 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/76224 ,  H01J37/32082 ,  H01J2237/332

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

公开(公告)号：US20220165569A1

公开(公告)日：2022-05-26

申请号：US17530983

申请日：2021-11-19

Applicant: ASM IP Holding B.V.

Inventor： Zecheng Liu ,  Sunja Kim ,  Viljami Pore ,  Jia Li Yao ,  Ranjit Borude ,  Bablu Mukherjee ,  René Henricus Jozef Vervuurt ,  Takayoshi Tsutsumi ,  Nobuyoshi Kobayashi ,  Masaru Hori

IPC: H01L21/02 ,  H01L21/762 ,  H01J37/32 ,  C23C16/40 ,  C23C16/02 ,  C23C16/455

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.