公开(公告)号：US20220005693A1

公开(公告)日：2022-01-06

申请号：US17360972

申请日：2021-06-28

Applicant: ASM IP Holding B.V.

Inventor： Takashi Mizoguchi ,  Eiichiro Shiba ,  Shinya Ueda ,  Sunja Kim

IPC: H01L21/033 ,  H01L21/02 ,  H01J37/32 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34 ,  C23C16/52 ,  C23C16/455

Abstract: Methods of depositing material on a surface of a substrate are disclosed. The methods include using a fluorine reactant to reduce a growth rate per cycle of silicon oxide and/or silicon nitride deposited onto a surface of a substrate.

公开(公告)号：US20230120214A1

公开(公告)日：2023-04-20

申请号：US17965559

申请日：2022-10-13

Applicant: ASM IP Holding B.V.

Inventor： Takashi Mizoguchi

IPC: H01L21/02 ,  H01L21/311 ,  C23C16/34 ,  C23C16/56 ,  C23C16/455 ,  C23C16/50

Abstract: A process for forming layered structures using plasma enhanced atomic layer deposition (PEALD) to deposit a TS-SiN film on trenches (or space and line patterns) of a substate. The SiN deposition process is adapted to form a TS-SiN film by controlling the argon to nitrogen flow ratio during deposition cycles such as by tuning the ratio of a first gas to a second gas provided continuously during PEALD deposition. The SiN film has etching selectivity between horizontal and vertical portions of the film and also etching selectivity between films at top and bottom portions of the patterns or trenches, e.g., with a portion of the thin film at the bottom of the pattern or trench having a higher WER than the thin film at the top of the pattern or trench. Wet etching may then be used to selectively etch material from the thin film in a topologically selective manner.