Invention Application
- Patent Title: MAGNETIC MEMORY DEVICE
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Application No.: US17212790Application Date: 2021-03-25
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Publication No.: US20220037586A1Publication Date: 2022-02-03
- Inventor: Junho Jeong , Joonmyoung Lee , Whankyun Kim , Eunsun Noh , Jeongheon Park , Wanjin Chung
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Priority: KR10-2020-0093853 20200728
- Main IPC: H01L43/02
- IPC: H01L43/02 ; H01F10/32 ; H01L43/10 ; G11C11/16 ; H01L27/22
Abstract:
Provided is a magnetic memory device. The magnetic memory device may include a magnetic tunnel junction. The magnetic tunnel junction may include a fixed layer, a tunnel barrier layer on the fixed layer, a free layer on the tunnel barrier layer, a protection layer above the free layer, the protection layer comprising an amorphous metal boride, and a capping layer on the protection layer, the capping layer comprising a metal or a metal nitride.
Information query
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