公开(公告)号：US20220037586A1

公开(公告)日：2022-02-03

申请号：US17212790

申请日：2021-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junho Jeong ,  Joonmyoung Lee ,  Whankyun Kim ,  Eunsun Noh ,  Jeongheon Park ,  Wanjin Chung

IPC: H01L43/02 ,  H01F10/32 ,  H01L43/10 ,  G11C11/16 ,  H01L27/22

Abstract: Provided is a magnetic memory device. The magnetic memory device may include a magnetic tunnel junction. The magnetic tunnel junction may include a fixed layer, a tunnel barrier layer on the fixed layer, a free layer on the tunnel barrier layer, a protection layer above the free layer, the protection layer comprising an amorphous metal boride, and a capping layer on the protection layer, the capping layer comprising a metal or a metal nitride.