- 专利标题： SEMICONDUCTOR DEVICE WITH TILTED INSULATING LAYERS AND METHOD FOR FABRICATING THE SAME
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申请号： US17031119申请日： 2020-09-24
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公开(公告)号： US20220093490A1公开(公告)日： 2022-03-24
- 发明人: Tse-Yao HUANG
- 申请人： NANYA TECHNOLOGY CORPORATION
- 申请人地址： TW New Taipei City
- 专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人： NANYA TECHNOLOGY CORPORATION
- 当前专利权人地址： TW New Taipei City
- 主分类号： H01L23/485
- IPC分类号： H01L23/485 ; H01L21/02 ; H01L23/00 ; H01L21/311 ; H01L21/033
摘要：
The present disclosure relates to a semiconductor device with tilted insulating layers and a method for fabricating the semiconductor device with the tilted insulating layers. The semiconductor device includes a substrate, two conductive pillars positioned above the substrate and extended along a vertical axis, a first set of tilted insulating layers parallel to each other and positioned between the two conductive pillars, and a second set of tilted insulating layers parallel to each other and positioned between the two conductive pillars. The first set of tilted insulating layers are extended along a first direction slanted with respect to the vertical axis, the second set of tilted insulating layers are extended along a second direction slanted with respect to the vertical axis, and the first direction and the second direction are crossed.
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